製品

TEG製品一覧

Material	Au		Solder		Cu				Ni		Electroless Ni/Au	Function
Material	Au		Solder		-	+SnAg	+Ni +SnAg	+Ni +Au	-	+SnAg	Electroless Ni/Au	Function
Form	PLATE	STUD	PLATE	MOUNT	PLATE	PLATE	PLATE	PLATE	PLATE	PLATE	PLATE	-
Image												-
MB50	●	●	●	-	●	●	●	●	●	●	-	Daisy
MB60	●	●	●	-	●	●	●	●	●	●	-	Daisy
MB80	●	●	●	-	●	●	●	●	●	●	-	Daisy
MB130	●	●	●	-	●	●	●	●	●	●	●	Daisy
CC40	●	-	●	-	●	●	●	●	●	●	-	Daisy
IP40	-	-	-	-	●	●	●	●	●	●	●	Daisy/Vernier Bump Short/ Breakdown Voltage
CC80	●	●	●	-	●	●	●	●	●	●	-	Daisy
IP80	-	-	-	-	●	●	●	●	●	●	●	Daisy
CC80TSV	-	-	-	-	-	●	●	-	-	-	●/◎	TSV
CC80MarkⅡ	●	●	●	-	●	●	●	●	●	●	-	Daisy/Migration
CC80MarkⅡWM	-	-	-	-	●	●	-	-	-	-	◎	Daisy/Migration
WM40-0101	-	-	-	-	◎	●	-	-	-	-	-	-
CC80MarkⅢ	-	-	-	-	●	●	-	-	-	-	◎	Daisy/Migration
WM40-0102	-	-	-	-	-	●	-	-	-	-	-	Daisy
CC80MarkⅣ	-	-	-	-	●	●	-	-	-	-	-	Daisy
IP80MarkⅣ	-	-	-	-	-	-	-	-	-	-	●	Daisy
FC150LC	-	-	-	-	●	●	-	-	-	-	-	Daisy
FC150(Si)	-	-	●	●	●	●	●	●	●	-	●	Daisy
FC150(Glass)	-	-	●	●	●	●	●	●	●	●	●	-
FC150SC	-	-	●	●	●	●	●	●	●	●	●	Daisy
FC200(Si)	-	-	●	●	●	●	●	●	●	●	●	Daisy
FC200(Glass)	-	-	●	●	●	●	●	●	●	●	●	-
FC200SC	-	-	●	●	●	●	●	●	●	●	●	Daisy
FBW	-	-	-	-	●	●	●	-	-	-	-	-
WLP	-	-	-	●	-	-	-	-	-	-	-	Daisy
ME	-	-	-	-	-	-	-	-	-	-	-	Migration
STAC	●	●	●	-	●	●	●	●	●	●	-	Stress/ Thermal/ HeatGeneration
STAC150FA	-	-	-	-	●	●	●	●	●	●	-	Stress/ Thermal/ HeatGeneration
STAC300FA	-	-	-	-	●	●	●	●	●	●	-	Stress/ Thermal/ HeatGeneration
HPW	●	●	●	-	●	●	●	●	●	●	-	Thermal/ Heat Generation
HPW150FA	-	-	-	-	●	●	●	●	●	●	-	Thermal/ Heat Generation
HPWTSV	-	-	-	-	-	●	-	-	-	-	◎	TSV
LCD30	●	-	●	-	●	●	●	●	●	●	●	Daisy/ Breakdown Voltage
PWB	-	-	-	-	-	-	-	-	-	-	-	Bondability

　● Top Side　/　◎Bottom Side

WALTS-TEG MB50-0101JY

Specification	Type-A	Type-B	Type-C (Glass)
Wafer Size	φ 8 inch	φ 8 inch	φ 8 inch
Wafer Thickness	725±25µm	725±25µm	700±70µm
Chip Size	7.3mm■	7.3mm■	7.3mm■
Pad Pitch	50µm	50µm	50µm
Function	Daisy Chian	Daisy Chian	－
Bump Size	－	Au: 30µm■ Cu: 30µm■ Cu: φ25µm●	Cu: 30µm■ Cu: φ25µm●
Bump Height	－	(Cu30µm+SnAg15µm)	(Cu30µm+SnAg15µm)
Number of Pad	544 pads/chip	544 pads/chip	－
Number of Chip	478 chips/wafer	478 chips/wafer	478 chips/wafer
Polyimide (Option)	○	○	○
Evaluation KIT	WALTS-KIT MB50-0102JY_NCR【Standard】 WALTS-KIT MB50-0104JY_CR【Standard】 WALTS-KIT MB50-0105JY_CR【Standard】 WALTS-KIT MB50-0102JY_NCR【MAP】 WALTS-KIT MB50-0103JY_CR【MAP】 WALTS-KIT MB50-0104JY_CR【MAP】

WALTS-TEG MB60-0101JY

Specification	MB60-0101JY
Wafer Size	φ8inch
Wafer Thickness	725±25µm
Chip Size	7.3mm■
Pad Pitch	60µm
Function	Daisy Chain
Bump Size	-
Bump Height	-
Number of Pad	448 pads/chip
Number of Chip	478 chips/wafer
Polymide(option)	○
Evaluation KIT	-

WALTS-TEG MB80-STG0101JY

Specification	Type-A	Type-B
Wafer Size	φ8inch	φ8inch
Wafer Thickness	725±25µm	725±25µm
Chip Size	7.3mm■	7.3mm■
Pad Pitch	80µm Staggred	80µm Staggred
Function	Daisy Chain	Daisy Chain
Bump Size	-	38µm■
Bump Height	(Wire Bonding)	(Cu30µm+SnAg15µm)
Number of Pad	648 pads/chip 82 pads × 4(Outer Line) 80 pads × 4(Inner Line)	648 pads/chip 82 pads × 4(Outer Line) 80 pads × 4(Inner Line)
Number of Chip	478 chips/wafer	478 chips/wafer
Polyimide(Option)	○	○

WALTS-TEG AS8R

Specification	AS8R
Wafer Size	φ8inch
Wafer Thickness	725±25µm
Chip Size	3.5mm■
Pad Pitch	120µm
Function	Daisy Chain
Bump Size	-
Bump Height	-
Number of Pad	96 pads/chip(Outer Line) 88 pads/chip(Inner Line)
Number of Chip	2266 chip/wafer
Polyimide(Option)	○
Evaluation KIT	-

WALTS-TEG MB130-STG0101JY
MB130A-STG0101JY

Specification	MB130		MB130A
Specification	TYPE-A	TYPE-B	MB130A
Wafer Size	φ6inch	φ6inch	φ8inch
Wafer Thickness	550±25µm	550±25µm	725±25µm
Chip Size	2.13mm■	2.13mm■	2.13mm■
Pad Pitch	130µm	130µm	130µm
Function	Daisy Chain	Daisy Chain	Daisy Chain
Bump Size	-	70µm■	-
Bump Height	(Wire Bonding) (Au Stud Bump)	(Cu30µm+SnAg15µm)	(Wire Bonding) (Au Stud Bump)
Number of Pad	108 pads/chip 15 pads × 4 (Outer Line) 12 pads × 4 (Inner Line)	108 pads/chip 15 pads × 4 (Outer Line) 12 pads × 4 (Inner Line)	108 pads/chip 15 pads × 4 (Outer Line) 12 pads × 4 (Inner Line)
Number of Chip	3300 chips/wafer	3300 chips/wafer	6060 chips/wafer
Polyimide(Option)	○	○	○
Evaluation KIT	-	-	-

WALTS-TEG MB6020-0102JY

Specification	MB6020-0102JY
Wafer Size	φ8inch
Wafer Thickness	725±25µm
Chip Size	3.0mm■
Pad Pitch	60/55/50/45/40/35/30/25/20µm
Function	Daisy Chain
Bump Size	-
Bump Height	-
Number of Pad	(40×4) (40×4)(38×4) (38×4)(36×4)(34×4) (30×4)(26×4)(18×4)
Number of Chip	3016 chips/wafer
Polyimide(Option)	-
Evaluation KIT	-

WALTS-TEG CC40-0101JY

Specification	CC40-0101JY
Wafer Size	φ8inch
Wafer Thickness	725±25µm
Chip Size	7.3 mm■
Pad Pitch	Model I:40µm Staggered + 40um Full Area　 Model II:40µm Staggered
Function	Daisy Chain
Bump Size	Model I:φ22µm Model II:φ22µm
Bump Height	(Cu15µm+SnAg10µm)
Number of Pad	Model I:29576 pads/chip Model II:1352 pads/chip
Number of Chip	478 chips/wafer
Polyimide(Option)	-
Evaluation KIT	WALTS-TEG IP40-0101JY (Silicon Interposer) WALTS-TEG IP40A-0101JY (Silicon Interposer)

WALTS-TEG IP40-0101JY

Specification	IP40-0101JY (Model I / Model II)
Wafer Size	φ 8 inch
Wafer Thickness	725±25µm
Chip Size	10.0 mm■
Pad Pitch	(1) 40µm pitch Full area + Staggered (Model I) 40µm pitch Staggered (Model II) (2) 250µm pitch Periphera (Outer Pad)
Function	Daisy Chain Bump Short Check Vernier Breakdown Voltage Check between the Bumps
Bump Size	-
Bump Height	-
Number of Pad	Model I :(1) 29576 pads/chip　 (2) 124 pads/chip (Outer Pad) Model II :(1) 1352 pads/chip　 (2) 124 pads/chip (Outer Pad)
Number of Chip	228 chips/wafer
Polyimide(Option)	-
Evaluation KIT	-

WALTS-TEG IP40A-0101JY

Specification	IP40A-0101JY (Model I)
Wafer Size	φ12inch
Wafer Thickness	775±25µm
Chip Size	10.0mm■
Pad Pitch	(1) 40µm pitch Full area + Staggered (Model I) (2) 250µm pitch Peripheral (Outer Pad)
Function	Daisy Chain Bump Short Check Vernier Breakdown Voltage Check between the Bumps
Bump Size	-
Bump Height	-
Number of Pad	Model I: (1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip	616 chips/wafer
Polyimide (Option)	-
Evaluation KIT	-

WALTS-TEG CC80-0101JY

Specification	CC80-0101JY
Wafer Size	φ8inch
Wafer Thickness	725±25µm
Chip Size	7.3mm■
Pad Pitch	80µm Staggered (Peripheral) 300µm Full Area (Center Core)
Function	Daisy Chain
Bump Size	Model I: 38µm■ or φ42µm● Model II: 38µm■ Model III:38µm■
Bump Height	(Cu30µm+SnAg15µm)
Number of Pad	Model I:1048 pads/chip Model II: 904pads/chip Model III:728pads/chip Model IV: 648pads/chip
Number of Chip	478 chips/wafer
Polyimide (Option)	○
Evaluation KIT	WALTS-TEG IP80-STG0101JY(Silicon Interposer) WALTS-KIT CC80-0104JY

WALTS-TEG IP80-0101JY

Specification	IP80-0101JY
Wafer Size	φ8inch
Wafer Thickness	725±25µm
Chip Size	10.0mm■
Pad Pitch	(1) 80µm Staggered (Inner Pad) (2) 300µm Full Area (Center Core) (3) 250µm Peripheral(Outer Pad)
Function	Daisy Chain
Bump Size	-
Bump Height	-
Number of Pad	(1)648 pads/chip (2)400 pads/chip (3)124 pad /chip
Number of Chip	228 chips/wafer
Polyimide (Option)	○
Evaluation KIT	-

WALTS-TEG CC80TSV-0101JY

Specification		CC80TSV-1	CC80TSV-2
Wafer Size		φ 8 inch	φ 8 inch
Chip Thickness		100µm	100µm
Chip Size		7.3 mm■	7.3 mm■
Pad Pitch		80µm Staggered (Periphera) 300µm Full Area (Center Core)	80μm Staggered (Periphera) 300μm Full Area (Center Core)
TSV Hole Diameter		φ40µm●	φ40µm●
Top Side	Electrode	Electroless Ni/Au	Cu+SnAg
	Bump Size	φ48µm● (Option: φ42µm●)	38µm■ (Option: φ42µm●)
	Bump Height	(8～12µm)	(Cu20µm+SnAg15µm)
Bottom Side	Electrode	Electroless Ni/Au	Electroless Ni/Au
	Bump Size	φ48µm● (Option: φ42µm●)	φ48µm● (Option: φ42µm●)
	Bump Height	(8～12µm)	(8～12µm)
Number of Chip		478 chips/wafer	478 chips/wafer
Evaluation KIT		WALTS-TEG CC80-0101JY WALTS-TEG IP80-0101JY (Silicon Interposer)

WALTS-TEG CC80MarKII-0101JY

Specification	CC80MarkII-0101JY【STD】
Wafer Size	φ8inch
Chip Thickness	725±25µm
Chip Size	12.0mm■
Pad Pitch	80µm Staggered(Peripheral) 200µm Full Area(Center Core)
Function	Daisy Chain & Migration
Bump Size	φ31µm●
Bump Height	(Cu30µm+SnAg15µm)
Number of Pad	1660 pads/chip (Peripheral) 2916 pads/chip (Center Core)
Number of Chip	177 chips/wafer
Polyimide (Option)	-
Evaluation KIT	WALTS-KIT CC80MarkII-0201JY

WALTS-TEG
CC80MarkII WM-0101JY

Specification		CC80MarkII WM-0101JY ※Base Wafer：WALTS TEG CC80MarkII-0101JY
Wafer Size		8inch
Wafer Thickness		100µm
Chip Size		10 mm × 8 mm
Function		Daisy Chain & Migration (Top Side)
Top Side	Electrode	Cu Pillar
	Bump Size	φ31µm●
	Bump Height	(Cu 20µm + SnAg 15µm)
Bottom Side	Electrode	Cu Post
	Bump Size	φ26µm●
	Bump Pitch	(1) 40µm	(2) 300µm
	Number of Bump	(1) 1200 bumps	(2) 714 bumps
	Bump Height	(Cu 6µm)
Number of Chip		177 chips/wafer
Evaluation KIT		WALTS-KIT CC80MarkII-0201JY WALTS-TEG WM40-0101JY

WALTS-TEG WM40-0101JY

Specification		WM40-0101JY
Wafer Size		8inch
Wafer Thickness		50µm
Chip Size		10 mm × 8 mm
Function		-
Top Side	Electrode	Cu Pillar
	Bump Size	Φ20µm●
	Bump Height	(Cu 15µm + SnAg 8µm)
	Bump Pitch	(1) 40µm	(2) 300µm
	Number of Bump	(1) 1200 bumps	(2) 714 bumps
Bottom Side	Electrode	Cu Post
	Bump Size	Φ26µm●
	Bump Pitch	(1) 40µm	(2) 300µm
	Number of Bump	(1) 1200 bumps	(2) 714 bumps
	Bump Height	(Cu 6µm)
Number of Chip		312 chips/wafer
Evaluation KIT		WALTS-KIT CC80MarkII-0201JY

WALTS-TEG CC80MarkIII0101JY

Specification		CC80MarkIII-0101JY
Wafer Size		6inch
Wafer Thickness		100µm or 350µm
Chip Size		12.0 mm × 12.0 mm
Function		Daisy Chain ＆ Migration(Top Side) Daisy Chain (Bottom Side)
Top Side	Electrode	Cu Pillar
	Bump Size	Φ31µm●
	Pad Pitch	(1) 80µm Three Rows Staggered (Peripheral) (2)200µm Full Area (Center Core)
	Number of Bump/Pad	(1) 1660bumps/1660pads (Peripheral) (2)2916bumps/2916pads (Center Core)
Bottom Side	Electrode	Electroless Ni/Au
	Bump Size	Φ20µm●
	Bump Pitch	(1) 40µm (Center Core) (2) 300µm (Peripheral) (3) 550µm (Outer Pad)
	Number of Bump	(1) 120 pads (Center Core) (2) 714 pads (Peripheral) (3) 40 pads (Outer Pad)
Number of Chip		89 chips/wafer
Evaluation KIT		WALTS-KIT CC80MarkII-0201JY WALTS-TEG WM40-0102JY

WALTS-TEG WM40-0102JY

Specification	WM40-0102JY
Wafer Size	8inch
Wafer Thickness	725±25µm
Chip Size	10 mm × 8 mm
Function	Daisy Chain
Electrode	Cu Pillar
Bump Size	φ20µm●
Bump Height	(Cu15µm + SnAg8µm)
Bump Pitch	(1) 40µm (2)300µm
Number of Bump	(1) 1200 bumps (2) 714 bumps
Number of Chip	312 chips/wafer
Evaluation KIT	WALTS-KIT CC80MarkII-0201JY

WALTS-TEG CC80MarkIV-0101JY

Specification	CC80MarkIV-0101JY
Wafer Size	8inch
Chip	Chip A	Chip B
Chip Size	6.0 mm × 10.0 mm	4.0 mm × 10.0 mm
Pad Pitch	(1) 40µm[10Row]×50µm[192Row] (Peripheral) (2) 80µm staggered[3Row](Center core) (3) 150µm Min. Lattice
Function	Daisy Chain
Electrode	Cu Pillar
Bump Size	φ25µm●
Number of Bump/Pad	(1)1920bumps/1920pads (2) 687 bumps/ 687 pads (3) 1743bumps/1743pads	(1)1920bumps/1920pads (2) 531 bumps/ 531 pads (3) 978 bumps/ 978 pads
Number of Chip	Chip A：228chips/wafer Chip B：228chips/wafer
Evaluation KIT	WALTS-TEG IP80MarkIV-0101JY (Sillicon Interposer)

WALTS-TEG IP80MarkIV-0101JY

Specification	IP80MarkIV-0101JY
Wafer Size	8inch
Wafer Thickness	725±25µm
Chip Size	15.0 mm × 15.0 mm
Pad Pitch	(1) 40µm[10Row]×50µm[192Row]×2 (Peripheral) (2) 80µm staggered[3Row](Center core) (3) 150µm Min. Lattice (4) 300µm (Staggered)
Function	Daisy Chain
Electrode	Electroless Ni/Au plating
Bump Size	(1)27µm● (2)27µm● (3)27µm● (4)141µm■
Number of Bump/Pad	(1)3840bumps/3840pads (2)1172bumps/1172pads (3)2721bumps/2721pads (4)328bumps/328pads
Number of Chip	97 chips/wafer
Evaluation KIT	-

WALTS-TEG FC150LC-0101JY

Specification	FC150LC-0101JY
Wafer Size	φ12 inch
Wafer Thickness	775±25µm
Chip Size	25.0mm■
Pad Pitch	150µm (Area)
Function	Daisy Chian
Bump Size	φ75µm●
Bump Height	Cu pillar (Cu30µm+SnAg15µm)
Number of Pad	25921 pads/chip (161×161)
Number of Chip	89 chips/wafer
Polyimide (Option)	○
Evaluation KIT	WALTS-KIT FC150LC-0302JY

WALTS-TEG FC150JY
【Si-Type】

Specification	Type-A	Type-B
Wafer Size	φ 8 inch	φ 8 inch
Wafer Thickness	725±25µm	725±25µm
Chip Size	10.0mm■	10.0mm■
Pad Pitch	150µm (Area)	150µm (Area)
Function	Daisy Chian	Daisy Chian
Bump Size	φ85µm●	φ75µm●
Bump Height	Ball Mounted Solder Bump (80µm)	Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad	3721 pads/chip (61×61)	3721 pads/chip (61×61)
Number of Chip	208 chips/wafer	208 chips/wafer
Polyimide (Option)	○	○
Evaluation KIT	WALTS-KIT 01A150P-10-2 WALTS-KIT FC150-0103JY 2×2 WALTS-KIT FC150-0104JY 2×2 WALTS-KIT FC150R-0102JY 2×2	WALTS-KIT 01A150P-10-2 WALTS-KIT FC150-0103JY 2×2 WALTS-KIT FC150-0104JY 2×2 WALTS-KIT FC150R-0102JY 2×2

WALTS-TEG FC150JY
【Glass-Type】

Specification	Type-A	Type-B
Wafer Size	φ8 inch	φ8 inch
Wafer Thickness	700±70µm	700±70µm
Chip Size	10.0mm■	10.0mm■
Pad Pitch	150µm (Area)	150µm (Area)
Function	-	-
Bump Size	φ85µm●	φ75µm●
Bump Height	Ball Mounted Solder Bump (80µm)	Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad	3721 pads/chip (61×61)	3721 pads/chip (61×61)
Number of Chip	228 chips/wafer	228 chips/wafer
Polyimide (Option)	208 chips/wafer	208 chips/wafer
Evaluation KIT	WALTS-KIT 01A150P-10-2 WALTS-KIT FC150-0103JY 2×2 WALTS-KIT FC150-0104JY 2×2 WALTS-KIT FC150R-0102JY 2×2	WALTS-KIT 01A150P-10-2 WALTS-KIT FC150-0103JY 2×2 WALTS-KIT FC150-0104JY 2×2 WALTS-KIT FC150R-0102JY 2×2

WALTS-TEG FC150SCJY

Specification	Type-A	Type-B
Wafer Size	φ8 inch	φ8 inch
Wafer Thickness	725±25µm	725±25µm
Chip Size	5.02mm■	5.02mm■
Pad Pitch	150µm (Area)	150µm (Area)
Function	Daisy Chian	Daisy Chian
Bump Size	φ85µm●	φ75µm●
Bump Height	Ball Mounted Solder Bump (80µm)	Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad	784 pads/chip (28×28)	784 pads/chip (28×28)
Number of Chip	832 chips/wafer	832 chips/wafer
Polyimide (Option)	○	○
Evaluation KIT	-	-

WALTS-TEG FC200JY
【Si-Type】

Specification	Type-A	Type-B
Wafer Size	φ8 inch	φ8 inch
Wafer Thickness	725±25µm	725±25µm
Chip Size	10.0mm■	10.0mm■
Pad Pitch	200µm (Area)	200µm (Area)
Function	Daisy Chian	Daisy Chian
Bump Size	φ100µm●	φ90µm●
Bump Height	Ball Mounted Solder Bump (80µm)	Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad	2116 pads/chip (46×46)	2116 pads/chip (46×46)
Number of Chip	228 chips/wafer	228 chips/wafer
Polyimide (Option)	○	○
Evaluation KIT	WALTS-KIT 01A200P-10 WALTS-KIT 01A200P-10_C400 WALTS-KIT FC200-0101JY 2×2 WALTS-KIT FC200-0102JY 2×2	WALTS-KIT 01A200P-10 WALTS-KIT 01A200P-10_C400 WALTS-KIT FC200-0101JY 2×2 WALTS-KIT FC200-0102JY 2×2

WALTS-TEG FC200JY
【Glass-Type】

Specification	Type-A	Type-B
Wafer Size	φ8 inch	φ8 inch
Wafer Thickness	700±70µm	700±70µm
Chip Size	10.0mm■	10.0mm■
Pad Pitch	200µm (Area)	200µm (Area)
Function	-	-
Bump Size	φ100µm●	φ90µm●
Bump Height	Ball Mounted Solder Bump (80µm)	Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad	2116 pads/chip (46×46)	2116 pads/chip (46×46)
Number of Chip	228 chips/wafer	228 chips/wafer
Polyimide (Option)	○	○
Evaluation KIT	WALTS-KIT 01A200P-10 WALTS-KIT 01A200P-10_C400 WALTS-KIT FC200-0101JY 2×2 WALTS-KIT FC200-0102JY 2×2	WALTS-KIT 01A200P-10 WALTS-KIT 01A200P-10_C400 WALTS-KIT FC200-0101JY 2×2 WALTS-KIT FC200-0102JY 2×2

WALTS-TEG FC200SCJY

Specification	Type-A	Type-B
Wafer Size	φ8 inch	φ8 inch
Wafer Thickness	725±25µm	725±25µm
Chip Size	5.02mm■	5.02mm■
Pad Pitch	200µm (Area)	200µm (Area)
Function	Daisy Chian	Daisy Chian
Bump Size	φ100µm●	φ90µm●
Bump Height	Ball Mounted Solder Bump (80µm)	Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad	484 pads/chip (22×22)	484 pads/chip (22×22)
Number of Chip	832 chips/wafer	832 chips/wafer
Polyimide (Option)	○	○
Evaluation KIT	WALTS-KIT FC200SC-0202JY 2×3 WALTS-KIT FC200SC-0202JY 3×3	WALTS-KIT FC200SC-0202JY 2×3 WALTS-KIT FC200SC-0202JY 3×3

WALTS-TEG FBW200-0001JY WALTS-TEG FBW150-0001JY
WALTS-TEG FBW130-0001JY
WALTS-TEG FBW100-0001JY
WALTS-TEG FBW80-0001JY

Specification	FBW200	FBW150	FBW130	FBW100	FBW80
Wafer Size	φ8 inch	φ8 inch	φ8 inch	φ8 inch	φ8 inch
Wafer Thickness	725±25µm	725±25µm	725±25µm	725±25µm	725±25µm
Bump Pitch	200µm	150µm	130µm	100µm	80µm
Electrode	Cu Pillar	Cu Pillar	Cu Pillar	Cu Pillar	Cu Pillar
Bump Size	φ90µm	φ75µm	φ65µm	φ50µm	φ40µm
Bump Height	(Max.60µm)	(Max.60µm)	(Max.60µm)	(Max.60µm)	(Max.50µm)

WLP TEG
(0.4mm pitch & 0.3mm pitch)

Specification	0.4mm pitch BGA	0.3mm pitch BGA
Wafer Size	φ8 inch	φ8 inch
Wafer Thickness	400±20µm	400±20µm
Chip Size	6.0mm■	6.0mm■
BGA Pitch	400µm	300µm
Function	Daisy Chain	Daisy Chain
Electrode	Ball Mounted Solder Bump	Ball Mounted Solder Bump
Pad Size	φ227µm●	φ177µm●
Number of Pad	144 pins/chip	264 pins/chip
Number of Chip	712 chips/wafer	712 chips/wafer

WLP TEG (Free Size Cut TEG:
TEG0306,TEG0408,TEG0510)

Specification	TEG0306	TEG0408	TEG0510
Wafer Size	φ8 inch	φ8 inch	φ8 inch
Wafer Thickness	400µm	400µm	400µm
Cut Size (Min.)	600µm■	800µm■	1000µm■
Pad Pitch	300µm	400µm	500µm
Function	Daisy Chain	Daisy Chain	Daisy Chain
Electrode	Ball Mounted Solder Bump	Ball Mounted Solder Bump	Ball Mounted Solder Bump
Post Size	175µm	200µm	250µm
Number of Chip	79257 chips/wafer	44161 chips/wafer	28212 chips/wafer

WALTS-TEG MC03-0101JY

Specification	WALTS-TEG MC03-0101JY
Wafer Size	φ 8 inch
Wafer Thickness	725µm±25µm
Chip Size	0.3mm■	0.4mm■	0.5mm■
Pad Pitch	120µm	220µm	320µm
Function	Daisy Chain	Daisy Chain	Daisy Chain
Pad Metal Size	X: 65µm Y: 170µm	X: 65µm Y: 270µm	X: 65µm Y: 370µm
Bump Size	40µm
Bump Height	Au(10µm)
Number of Chip	149,216 chips/wafer	80,816 chips/wafer	26,604 chips/wafer
Evaluation KIT	---

WALTS-TEG ME0102JY
[for Migration Test]

Specification	WALTS-TEG ME0102JY
Wafer Size	φ 12 inch
Chip Size	20mm×25mm
Chip Name	Chip_10_15		Chip_20_25		Chip_30_35
Metal Height	5.5µm
Facing Legth	3mm
Line/Space	15µm/10µm	15µm/15µm	15µm/20µm	15µm/25µm	15µm/30µm	15µm/35µm
Pitch	25µm	30µm	35µm	40µm	45µm	50µm
Number of Chip	34 chips/wafer		40 chips/wafer		34 chips/wafer

WALTS-TEG STAC-0101JY
[for Stress & Thermal Resistance Analysis]

Specification	STAC-0101JY
Wafer Size	φ 6 inch(Orientation Flat)
Wafer Thickness	550±25µm
Chip Size	3.0mm■
Pad Pitch	300µm
Function	Stress Analysis by Piezoresistance Thermal Analysis by Diode Heat Generarion by Resistance
Electrode	(Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad	32 pads/chip
Number of Chip	1596 chips/wafer
Polyimide (Option)	○
Option	Back Side Metallization
Evaluation KIT	WALTS-KIT STAC-0201JY

WALTS-TEG STACTEG-150FA-0101JY
WALTS-TEG STACTEG-300FA-0101JY

※Base Wafer:WALTS-TEG STAC-0101JY

Specification	STACTEG-150FA	STACTEG-300FA
Wafer Size	φ 6 inch (Orientation Flat)	φ 6 inch (Orientation Flat)
Wafer Thickness	550±25µm	550±25µm
Chip Size	3.0mm■	3.0mm■
Pad Pitch	150µm	300µm
Function	Stress Analysis by Piezoresistance Thermal Analysis by Diode Heat Generarion by Resistance	Stress Analysis by Piezoresistance Thermal Analysis by Diode Heat Generarion by Resistance
Bump Size	φ110µm●	φ110µm●
Bump Height	(Ni5µm+SnAg75µm）	(Cu50µm+SnAg10µm)
Number of Pad	32 pads/chip	32 pads/chip
Number of Bump	32 bumps + 253 Dummy bumps	32 bumps + 64 Dummy bumps
Number of Chip	1596 chips/wafer	1596 chips/wafer
Polyimide (Option)	○	○
Option	Back Side Metallization	Back Side Metallization
Evaluation KIT	WALTS-KIT STAC-0201JY	WALTS-KIT STAC-0201JY

WALTS-TEG HPW-0101JY

Specification	HPW-0101JY
Wafer Size	φ 8 inch(Notch)
Wafer Thickness	725±25µm
Chip Size	3.0mm■
Pad Pitch	300µm
Function	Thermal Analysis by Diode Heat Generarion by Resistance
Electrode	(Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad	32 pads/chip
Number of Chip	2964 chips/wafer
Polyimide (Option)	○
Maximum Output	Max. 14.5W/Chip
Option	Back Side Metallization

WALTS-TEG HPWTEG-150FA-0101JY
WALTS-TEG HPWTEG-300FA-0101JY

※Base Wafer：WALTS-TEG HPW-0101JY

Specification	HPWTEG-150FA	HPWTEG-300FA
Wafer Size	φ 8 inch(Notch)	φ 8 inch(Notch)
Wafer Thickness	725±25µm	725±25µm
Chip Size	3.0mm■	3.0mm■
Pad Pitch	150µm	300µm
Function	Thermal Analysis by Diode Heat Generarion by Resistance	Thermal Analysis by Diode Heat Generarion by Resistance
Bump Size	φ110µm●	φ110µm●
Bump Height	(Ni5µm+SnAg75µm)	(Cu50µm+SnAg10µm)
Number of Pad	32 pads/chip	32 pads/chip
Number of Bump	32 bumps + 253 Dummy bumps	32 bumps + 64 Dummy bumps
Number of Chip	2964 chips/wafer	2964 chips/wafer
Option	Back Side Metallization	Back Side Metallization
Evaluation KIT	-

WALTS-TEG HPW TSV-0101JY

※Base Wafer：WALTS-TEG
HPW-0101JY(SiN)

Specification		HPW TSV-0101JY
Wafer Size		φ 8 inch(Notch)
Wafer Thickness		100µm
Chip Size		3.0mm■
Top Side	Electrode	Cu Pillar
	Bump Pitch	300µm
	Bump Size	φ100µm●
	Bump Height	(Cu50µm+SnAg10µm)
	Number of Bump	32 bumps + 64 Dummy bumps
TSV	Via Size	φ90µm●
Bottom Side	Electrode	Electroless Ni/Au Plating
	Bump Pitch	300µm
	Bump Size	φ100µm●
	Bump Height	(8µm)
	Number of Bump	32 bumps
Number of Chip		2964 chips/wafer
Evaluation KIT		-

WALTS-TEG Thermal Chip

Specification	Type-A	Type-B	Type-C
Wafer Size	φ 5 inch	φ 5 inch	φ 5 inch
Wafer Thickness	625µm	625µm	625µm
Chip Size	3.2mm■	1.6mm■	0.8mm■
Pad Pitch	any	any	any
Function	Fever resistance	Fever resistance	Fever resistance
Bump Size	-	-	-
Bump Height	-	-	-
Number of Pad	20 pads/chip	12 pads/chip	8 pads/chip
Number of Chip	655 chips/wafer	974 chips/wafer	1272 chips/wafer
Polyimide (Option)	○	○	○
Evaluation KIT	-	-	-

WALTS-TEG LKWB120
(Low-k TEG)

Specification	LKWB120
Wafer Size	φ 12 inch
Wafer Thickness	775±25µm
Chip Size	10.0mm■
Pad Pitch	120µm Staggered
Function	Daisy Chian,Comb tooth Capacitor,Serpentine Resistor,Interlayer Capacitor,ViaChain
Bump Size	-
Bump -Height	-
Number of Pad	616 pads/chip
Number of Chip	636 chips/wafer
Polyimide (Option)	○
Evaluation KIT	WALTS-KIT LKWB120

WALTS-TEG PWB0101JY

Specification	PWB0101JY
Wafer Size	φ 6 inch
Wafer Thickness	625±25µm
Chip Size	6.0mm■
Pad Pitch	-
Function	Bondability Check
Bump Size	-
Bump Height	-
Number of Pad	-
Number of Chip	-
Polyimide (Option)	-
Evaluation KIT	-

WALTS-TEG LCD30-0101JY

Specification	LCD30-0101JY
Wafer Size	φ 6 inch
Wafer Thickness	550±25µm
Chip Size	15.1 mm × 1.6 mm
Pad Pitch	30µm
Function	Daisy Chian
Bump Size	20µm×100µm
Bump Height	any
Number of Pad	726 pads/chip
Number of Chip	530 chips/wafer
Polyimide (Option)	○
Evaluation KIT	WALTS-KIT LCD30_ITO WALTS-KIT COF30

KIT製品一覧

Product	Ni/Au	Cu	Cu+OSP	Core:E-679FG (R) SAC	Core:E-700G (R) SAC	Core:E-700G (R) NiPdAu+SAC	Core:E-705G (R) NiPdAu+SAC	Eutectic Solder	Electro Sn
MB50-NCR Standard/Map	●	-	●	-	-	-	-	-	-
MB50-CR Standard/Map	●	●	●	●	-	-	-	-	●
CC80	●	●	●	●	-	-	-	-	-
CC80-NCR	●	●	●	-	-	-	-	-	-
CC80-FR2	-	-	●	-	-	-	-	-	-
CC80MARKⅡ	-	●	●	-	-	-	-	-	-
FC150LC-1×1	●	●	●	-	-	-	●	-	●
FC150-1×1	●	●	●	●	-	-	-	-	-
FC150-2×2	●	●	●	-	●	●	●	-	-
FC150R-2×2	●	●	●	-	●	●	-	-	-
FC200-1×1	●	●	●	●	-	-	-	-	-
FC200-2×2	●	●	●	●	●	-	-	●	-
FC200SC-2×3	●	●	●	-	●	-	-	-	●
FC200SC-3×3	●	●	●	-	●	-	-	-	●
WLP300P/400P	●	-	-	-	-	-	-	-	-
EM0101JY	-	●	-	-	-	-	-	-	-
STAC	●	●	●	-	-	-	●	-	-

その他のKIT製品

WALTS-TEG IP40-0101JY*Silicon Interposer

WALTS-TEG IP40A-0101JY*Silicon Interposer

WALTS-TEG IP80-0101JY*Silicon Interposer

WALTS-COF TEG-KIT001

KIT LCD30-0101JY

KIT LCD30-0102JY

WALTS-KIT COF30-0101JY

WALTS-KIT MB50-0102JY_NCR
【Standard】

Specification	WALTS-KIT MB50-0102JY_NCR *NCR: Non Center Solder Resist
Solder Resist Under Chip	MB50-0101JY_NCR
Structure	1-2-1 Build up Substrate
Layer Structure	Layer1 Signal Layer (no Via) Layer2～Layer4 Mesh
Outline	17.0mm×17.0mm×t(0.8mm～1.0mm)
Core Material	Core: E-679FGR Build Layer: ABF-GX13
Solder Resist Material	PSR4000 AUS-703
Lead Min L/S	20µm/30µm
Number of Lead	536
Pad Dimensions	φ0.8µm (SR opening: φ0.65µm)
Number of Measurement Pad	32 pads
Electrode	Electroless Ni/Au plating

WALTS-KIT MB50-0104JY_CR
【Standard】
WALTS-KIT MB50-0105JY_CR
【Standard】

Specification	WALTS-KIT MB50-0104JY_CR WALTS-KIT MB50-0105JY_CR *CR: Center Solder Resist
Solder Resist Under Chip	MB50-0101JY_CR
Structure	1-2-1 Build up Substrate
Layer Structure	Layer1 Signal Layer (no Via) Layer2～Layer4 Mesh
Outline	17.0mm×17.0mm×t(0.8mm～1.0mm)
Core Material	WALTS-KIT MB50-0104JY_CR 　Core: E-679FGR 　Build Layer: ABF-SH9K WALTS-KIT MB50-0105JY_CR 　Core: E-679FGR 　Build Layer: ABF-GX13
Solder Resist Material	WALTS-KIT MB50-0104JY_CR 　PFR800AUS-410 WALTS-KIT MB50-0105JY_CR 　PSR4000 AUS-703
Lead Min L/S	20µm/30µm
Number of Lead	536
Pad Dimensions	φ0.8µm (SR opening: φ0.65µm)
Number of Measurement Pad	32 pads
Electrode	WALTS-KIT MB50-0104JY_CR 　Electroless Ni/Au plating WALTS-KIT MB50-0105JY_CR 　Electroless Ni/Au plating Cu + OSP Cu (option: Solder Coat / Sn Coat) 　*OSP: Organic Solderability Preservatives

WALTS-KIT MB50-0102JY_NCR
【MAP】

Specification	WALTS-KIT MB50-0102JY_NCR【MAP】 *NCR: Non Center Solder Resist
Solder Resist Under Chip	MB50-0102JY_NCR
Structure	1-2-1 Build up Substrate
Layer Structure	Layer1 Signal Layer (no Via) Layer2～Layer4 Mesh
Outline	187.5mm×64.0mm×t(0.36mm)
Core Material	Core: E-679FGBS Build Layer: GX-13
Solder Resist Material	PFR800 AUS-410
Lead Min L/S	20µm/30µm
Number of Lead	536
Pad Dimensions	φ0.8µm (SR opening: φ0.65µm)
Number of Measurement Pad	32 pads
Electrode	Electroless Ni/Au plating Cu+OSP

WALTS-KIT MB50-0103JY_CR
【MAP】
WALTS-KIT MB50-0104JY_CR
【MAP】

Specification	WALTS-KIT MB50-0103JY_CR【MAP】 WALTS-KIT MB50-0104JY_CR【MAP】 *CR: Center Solder Resist
Solder Resist Under Chip	MB50-0103JY_CR, MB50-0104JY_CR
Structure	1-2-1 Build up Substrate
Layer Structure	Layer1 Signal Layer (no Via) Layer2～Layer4 Mesh
Outline	187.5mm×64.0mm×t(0.36mm)
Core Material	Core: E-679FGBS Build Layer: ABF-GX92
Solder Resist Material	PSR4000 AUS-703
Lead Min L/S	20µm/30µm
Number of Lead	536
Pad Dimensions	φ0.8µm (SR opening: φ0.65µm)
Number of Measurement Pad	32 pads
Electrode	WALTS-KIT MB50-0103JY_CR【MAP】 Electroless Ni/Au plating Cu + OSP Cu (option: Solder Coat / Sn Coat) WALTS-KIT MB50-0104JY_CR【MAP】 Electro Sn plating 　*OSP: Organic Solderability Preservatives

WALTS-TEG IP40-0101JY
*Silicon Interposer

Specification	WALTS-TEG IP40-0101JY *Silicon Interposer [for WALTS-TEG CC40-0101JY]
Wafer Size	φ 8 inch
Wafer Thickness	725±25µm
Chip Size	10.0 mm■
Pad Pitch	(1) 40µm pitch Full area + Staggered (Model Ⅰ) 40µm pitch Staggered (Model Ⅱ) (2)250µm pitch Periphera (Outer Pad)
Function	Daisy Chian Bump Short Check Vernier Breakdown Voltage Check between the Bumps
Bump Size	-
Bump Height	-
Number of Pad	Model Ⅰ (1) 29576 pads/chip (2) 124 pads/chip (Outer Pad) Model Ⅱ (1) 1352 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip	228 chips/wafer
Polyimide (Option)	-

WALTS-TEG IP40A-0101JY
*Silicon Interposer

Specification	WALTS-TEG IP40A-0101JY *Silicon Interposer [for WALTS-TEG CC40-0101JY]
Wafer Size	φ 8 inch
Wafer Thickness	725±25µm
Chip Size	10.0 mm■
Pad Pitch	(1) 40µm pitch Full area + Staggered (2)250µm pitch Periphera (Outer Pad)
Function	Daisy Chian Bump Short Check Vernier Breakdown Voltage Check between the Bumps
Bump Size	-
Bump Height	-
Number of Pad	(1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip	616 chips/wafer
Polyimide (Option)	-

WALTS-TEG IP80-0101JY
*Silicon Interposer

Specification	WALTS-TEG IP80-0101JY *Silicon Interposer [for WALTS-TEG CC80-0101JY]
Wafer Size	φ 8 inch
Wafer Thickness	725±25µm
Chip Size	10.0 mm■
Pad Pitch	(1) 80µm Staggered (Inner Pad) (2) 300µm Full Area (Center Core) (3) 250µm Periphera (Outer Pad)
Function	Daisy Chian
Bump Size	-
Bump Height	-
Number of Pad	(1) 648 pads/chip (2) 400 pads/chip (3) 124 pads/chip
Number of Chip	228 chips/wafer
Polyimide (Option)	○

WALTS-KIT CC80-0104JY
【MAP】(TypeA /TypeB)

Specification	WALTS-KIT CC80-0104JY【MAP】（Type A / Type B）
Structure	1-2-1 Build up Substrate
Layer Structure	Layer 1, 2 Signal Layer(Via) Layer 3, 4 Mesh
Outline	Type A: 187.5mm×64.0mm×t(0.36mm) Type B: 187.5mm×64.0mm×t(0.35mm)
Core Material	Core: E-679FGBS Build Layer: GX-92
Solder Resist Material	Type A: PSR4000 AUS-703 Type B: PSR4000 AUS-320
Lead Min L/S	32µm/48uµm
Number of Lead	648
Pad Dimensions	φ0.75mm (SR opening: φ0.67mm)
Number of Measurement Pad	72 pads
Electrode	Electroless Ni/Au Plating Cu Cu + OSP *OSP: Organic Solderability Preservatives

WALTS-KIT CC80-0104JY_NCR【MAP】

Specification	WALTS-KIT CC80-0104JY_NCR【MAP】
Structure	1-2-1 Build up Substrate
Layer Structure	Layer 1, 2 Signal Layer(Via) Layer 3, 4 Mesh
Outline	Type A: 187.5mm×64.0mm×t(0.36mm) Type B: 187.5mm×64.0mm×t(0.35mm)
Core Material	Core: E-679FGBS Build Layer: GX-92
Solder Resist Material	Type A: PSR4000 AUS-703 Type B: PSR4000 AUS-320
Lead Min L/S	32µm/48µm
Number of Lead	648
Pad Dimensions	φ0.75mm (SR opening: φ0.67mm)
Number of Measurement Pad	72 pads
Electrode	Electroless Ni/Au Plating Cu Cu + OSP *OSP: Organic Solderability Preservatives

WALTS-KIT CC80-FR2
【MAP】ModelⅠ

Specification	WALTS-KIT CC80-FR2【MAP】ModelⅠ
Structure	1-2-1 Build up Substrate
Layer Structure	Layer 1, 2 Signal Layer(Via) Layer 3, 4 Mesh
Outline	187.5mm×64.0mm×t(0.35mm)
Core Material	Core: E-679FGBS Build Layer: GX-92
Solder Resist Material	PSR800 AUS-410
Solder Resist thickness above Cu metal	10µm
Lead Min L/S	32µm/48µm
Number of Lead	Peripheral: 648 Full Area: 400
Pad Dimensions	φ0.75mm (SR opening: φ0.67mm)
Number of Measurement Pad	72 pads
Electrode	Cu + OSP *OSP: Organic Solderability Preservatives

WALTS-KIT CC80MarkⅡ-0201JY
【MAP】

Specification	WALTS-KIT CC80MarkⅡ-0201JY【MAP】
Structure	1-2-1 Build up Substrate
Layer Structure	Layer 1, 2 Signal Layer(Via) Layer 3, 4 Mesh
Outline	230.0mm×62.5mm×t(0.36mm)
Core Material	Core:HL832NSFLC (0.2mmt) Build Layer: ABF-GX13
Solder Resist Material	PSR800 AUS-410
Lead Min L/S	16µm/24µm
Number of Electrode	1660 (Peripheral) 2916 (Center Core)
Pad Dimensions	[Square] 0.70mm×0.48mm (SR opening: 0.62mm×0.40mm) [Dome] 　 0.71mm×0.48mm (SR opening: 0.63mm×0.40mm)
Number of Measurement Pad	[Square]68 pads [Dome]8 pads
Electrode	Cu Cu + OSP *OSP: Organic Solderability Preservatives

WALTS-KIT FC150LC-0302JY

Specification	WALTS-KIT FC150LC-0302JY
Layer Structure	2-2-2
Outline	55.0mm×55.0mm×t(0.634mm)
Core Material	Core: E-705G
Solder Resist	PSR4000 AUS-703
Land Size	φ0.13mm
Number of Lead	25921 (161×161)
SR Opening	φ90µm
Number of Measurement Pad	240 pads
Daisy Pattern	(1) Daisy Chain Pattern A: 196 Pads(14×14) (2) Daisy Chain Pattern B: 72 Pads(12×6) (3) Daisy Chain Pattern C: 169 Pads(13×13) (4) Daisy Pattern D: 12 Pads(4×3)
Electrode	Cu Cu+OSP Electroless Plating: Ni/Pd/Au Electroless Plating: Ni/Pd/Au+SnAgCu Electro Plating: Sn etc.

WALTS-KIT 01A150P-10-2 1×1

Specification	WALTS-KIT 01A150P-10-2　1×1
Structure	Rigid Substrate (Both)
Outline	30.0mm×30.0mm×t(0.96mm)
Core Material	Core: E-679FGR
Solder Resist	PSR4000 AUS-703
Land Size	φ0.12mm
Number of Lead	3721 (61×61)
SR Opening	φ80uµm
Number of Measurement Pad	24 pads
Daisy Chain	Center Area 16×15 Matrix Corner Area 15×15 four Matrix
Electrode	Electroless Ni/Au Plating Cu + OSP (option Solder Coat) *OSP: Organic Solderability Preservatives

WALTS-KIT FC150-0104JY 2×2
(E-700G)

Specification	WALTS-KIT FC150-0104JY　2×2（E-700G）
Structure	Rigid Substrate (Both)
Outline	35.0mm×35.0mm×t(0.96mm)
Core Material	Core: E-700G
Solder Resist	PSR4000 AUS-703
Land Size	φ0.12mm
Number of Lead	14884 (3721/chip×4)
SR Opening	φ80µm
Number of Measurement Pad	32 pads
Daisy Chain	Center Area 30×30 Matrix Corner Area 15×15 four Matrix
Electrode	Electroless Ni/Au Plating NiPdAu+SAC Cu + OSP (option Solder Coat) *OSP: Organic Solderability Preservatives

WALTS-KIT FC150-0103JY2×2
(E-705G)

Specification	WALTS-KIT FC150-0103JY　2×2（E-705G）
Structure	Rigid Substrate (Both)
Outline	35.0mm×35.0mm×t(0.36mm)
Core Material	Core: E-705G
Solder Resist	PSR4000 AUS-703
Land Size	φ0.12mm
Number of Lead	14884 (3721/chip×4)
SR Opening	φ80µm
Number of Measurement Pad	32 pads
Daisy Chain	Center Area 30×30 Matrix Corner Area 15×15 four Matrix
Electrode	NiPdAu+SAC

WALTS-KIT FC150R-0102JY 2×2

Specification	WALTS-KIT FC150R-0102JY 2×2
Structure	Rigid Substrate (Both)
Outline	35.0mm×35.0mm×t(0.96mm)
Core Material	Core: E-700G
Solder Resist	PSR4000 AUS-703
Land Size	φ0.12mm
Number of Lead	14884 (3721/chip×4)
SR Opening	φ80µm
Number of Measurement Pad	32 pads
Daisy Chain	Center Area 30×30 Matrix Corner Area 15×15 four Matrix
Electrode	Cu Cu+OSP Electroless Plating: Ni/Pd/Au Plating NiPdAu+SAC Cu + SAC *OSP: Organic Solderability Preservatives

WALTS-KIT 01A200P-10 1×1

Specification	WALTS-KIT 01A200P-10 1×1
Structure	Rigid Substrate (Both)
Outline	35.0mm×35.0mm×t(0.86mm)
Core Material	Core: E-679FGR
Solder Resist	PSR4000 AUS-703
Land Size	φ0.14mm
Number of Lead	2116 (46×46)
Vehicle	10mm×10mm 200um pitch area
SR Opening	φ95µm
Number of Measurement Pad	24 pads
Daisy Chain	Center Area 12×12 Matrix Corner Area 12×11 four Matrix
Electrode	Electroless Ni/Au Plating Cu Cu + OSP (option Solder Coat) *OSP: Organic Solderability Preservatives

WALTS-KIT 01A200P-10_C400 1×1

Specification	WALTS-KIT 01A200P-10_C400 1×1
Structure	Rigid Substrate (Both)
Outline	35.0mm×35.0mm×t(0.46mm)
Core Material	Core: E-679FGR
Solder Resist	PSR4000 AUS-703
Land Size	φ0.14mm
Number of Lead	2116 (46×46)
Vehicle	10mm×10mm 200µm pitch area
SR Opening	φ95µm
Number of Measurement Pad	24 pads
Daisy Chain	Center Area 12×12 Matrix Corner Area 12×11 four Matrix
Electrode	SnAgCu

WALTS-KIT FC200-0101JY 2×2
WALTS-KIT FC200-0102JY 2×2

Specification	WALTS-KIT FC200-0101JY 2×2 WALTS-KIT FC200-0102JY 2×2
Structure	Rigid Substrate (Both)
Outline	35.0mm×35.0mm×t(0.87mm)
Core Material	WALTS-KIT FC200-0101JY　2×2 Core: E-679FGR WALTS-KIT FC200-0102JY　2×2 Core: E-700GR
Solder Resist	PSR4000 AUS-703
Land Size	φ0.14mm
Number of Lead	8464 (2116/chip×4)
Vehicle	20mm×20mm 200µm pitch area
SR Opening	φ95µm
Number of Measurement Pad	32 pads
Daisy Chain	Center Area 20×18 Matrix Corner Area 12×11 four Matrix
Electrode	Electroless Ni/Au Plating Cu + OSP (option Solder Coat) *OSP: Organic Solderability Preservatives

WALTS-KIT FC200SC-0202JY 2×3

Specification	WALTS-KIT FC200-0101JY 2×2
Structure	Rigid Substrate (Both)
Outline	35.0mm×35.0mm×t(1.05mm)
Core Material	Core: E-700G
Solder Resist	PSR4000 AUS-703
Land Size	φ0.14mm
Number of Lead	2904 (484/chip×6)
Vehicle	10.04mm×15.06mm 200µm pitch area
SR Opening	φ95µm
Number of Measurement Pad	64 pads
Daisy Chain	Center Area 8×10 two Matrix Corner Area 12×11 four Matrix Out Side Area 7×12　two Matrix
Electrode	Electroless Sn Plating Cu + OSP (option Solder Coat) *OSP: Organic Solderability Preservatives

WALTS-KIT FC200SC-0202JY 3×3

Specification	WALTS-KIT FC200-0101JY 3×3
Structure	Rigid Substrate (Both)
Outline	35.0mm×35.0mm×t(1.05mm)
Core Material	Core: E-700G
Solder Resist	PSR4000 AUS-703
Land Size	φ0.14mm
Number of Lead	2904 (484/chip×6)
Vehicle	10.04mm×15.06mm 200µm pitch area
SR Opening	φ95µm
Number of Measurement Pad	64 pads
Daisy Chain	Center Area 8×10 two Matrix Corner Area 12×11 four Matrix Out Side Area 7×12　two Matrix
Electrode	Electroless Sn Plating Cu + OSP (option Solder Coat) *OSP: Organic Solderability Preservatives

WALTS-KIT WLP300P/400P

Specification	WALTS-KIT WLP300P/400P * for WLP TEG (0.4mm pitch & 0.3mm pitch)
Structure	1-0-1 Build up Substrate
Layer Structure	Layer1, Layer2
Outline	30.0mm×30.0mm×t(0.93mm)
Core Material	Core: E-679FGR Build Layer: ABF-GX13
Solder Resist	PSR4000 AUS-703
Number of Lead	WLP300P: 264 WLP400P: 144
Pad Dimensions	2.4mm×4.0mm (SR opening: 2.2mm×3.8mm)
Number of Measurement Pad	15 pads
Electrode	Electroless Ni/Au plating

WALTS-KIT EM0101JY
(for Electro Migration Analysis)

Specification	WALTS-KIT EM0101JY
Outline	250.0mm×90.0mm×t(1.53mm)
Core Material	Core: E-679GT
Solder Resist	PSR4000 AUS-703
Lead Min L/S	①L/S=40µm/15µm ②L/S=40µm/20µm ③L/S=40µm/30µm ④L/S=40µm/40µm ⑤L/S=40µm/50µm

WALTS-KIT STAC-0201JY

Specification	WALTS-KIT STAC-0201JY
Structure	Rigid Substrate (Both)
Outline	45.0mm×45.0mm×t(0.55mm)
Core Material	Core: E-705G
Solder Resist	PSR4000 AUS-703
FCA Area	Pad Pitch: 300µm SR Opening: φ110µm ・Top Side: for 1×1 chip, 3×3 chip ・Bottom Side: for 2×2 chip, 4×4chip
Electrode	Cu Cu + OSP Ni/Au Ni/Pd/Au+SnAgCu *OSP: Organic Solderability Preservatives

WALTS-COF TEG-KIT001

Specification	WALTS-COF TEG-KIT001
Core Material	S'PERFLEC-S Grade (KAPTON) S'PERFLEC-US Grade (ESPANEX)
Composition	Polyimide: KAPTON (38µm), ESPANEX(34µm) Cu: Sputtered 8µm
Solder Resist	-
Plating Material	Sn (0.2±0.05)
Lead Pitch	①12.5µm/12.5µm ②15.0µm/10.0µm ③10.0µm/15.0µm ④10.0µm/10.0µm
Pad Dimensions	3.0mm×1.5mm

WALTS-KIT LCD30-0101JY

Specification	WALTS-KIT LCD30-0101JY
Material	Non Alkali Glass
Outline	52.55mm×24.00mm×t(0.70mm)
Wire Material	ITO 1,500Å (option IZO)
Function	Daisy Chain Breakdown Voltage Check between the Bumps
Conformed Chip	WALTS-TEG LCD30-0101JY

WALTS-KIT LCD30-0102JY

Specification	WALTS-KIT LCD30-0102JY
Material	Non Alkali Glass
Outline	52.55mm×24.00mm×t(0.70mm)
Wire Material	Al-Nd (150nm)
Function	Daisy Chain Breakdown Voltage Check between the Bumps
Leed Protection Film	SiN
Conformed Chip	WALTS-TEG LCD30-0101JY

WALTS-KIT COF30-0101JY

Specification	WALTS-KIT COF30-0101JY
State	Reel
Product Name	S'PERFLEX
Plating Material	Au

SIPOS-TEG　製品詳細

SIPOS-TEG SB04【Periphral & Staggered】

Specification	SB0401	SB0402	SB0403	SB0404
Wafer Size	φ 8 inch
Wafer Thickness	725um±25µm
Chip Size	3.0mm■	3.0mm■	3.0mm■	3.0mm■
Pad Pitch	60um Periphral	80um Periphral	100um Periphral	300um Staggered
Number of Pad	168pad	120pad	96pad	256pad
Pad Size	46µm■	60µm■	80µm■	32µm■
Pad Opening Size	40µm■	50µm■	70µm■	26µm■
Scribe Width	100µm	100µm	100µm	100µm
Comb Dimension	L/S = 7µm/7µm	L/S = 10µm/10µm	L/S = 12µm/12µm	L/S = 5µm/5µm
Number of Comb	70 (35×2)	50 (25×2)	40 (20×2)	100 (50×2)
Interlayer Dielectric Patter	φ1.0mm (Octagon)	φ1.0mm (Octagon)	φ1.0mm (Octagon)	φ1.0mm (Octagon)

SIPOS-TEG SB05/06【Full Area】

Specification	SB0501	SB0502	SB0601	SB0602
Wafer Size	φ 8 inch
Wafer Thickness	725um±25µm
Chip Size	3.0mm■	3.0mm■	3.0mm■	3.0mm■
Pad Pitch	150µm	300µm	150µm	300µm
Number of Pad	324pad	64pad	68pad	32pad
Daisy Chain Pad	180pad	32pad	-	-
Pad Size	100µm■	190µm■	100µm■	190um■
Pad Opening	φ90µm	φ180µm	φ100µm	φ180µm
Scribe Width	100µm	100um	100µm	100µm
Comb Dimension	-	-	L/S = 18µm/18µm	L/S = 36µm/36µm
Number of Comb	-	-	28 (14×2)	14 (7×2)
Interlayer Dielectric Patter	-	-	φ1.0mm (Octagon)	φ1.0mm (Octagon)

SIPOS-TEG TEST-9【TSV】

Specification	A	B	C	D
Wafer Size	φ 8 inch
Wafer Thickness	725um±25µm
Chip Size	20.0mm■	20.0mm■	20.0mm■	20.0mm■
TSV Hole Diameter	20µm●　20µm■	30µm●　30µm■	50µm●　50µm■	80µm●　80µm■
TSV Pitch (X)	80µm	120µm	150µm	200µm
TSV Pitch (Y)	40µm, 50µm, 60µm	60µm, 80µm, 100µm	80µm, 100µm, 120µm	120µm, 150µm, 220µm

サービス一覧

ウェハ成膜・試作サービス

シリコンウェハ

サイズ	φ4～φ12
種類	プライムウェハ、モニターウェハ等供給可能
数量	1部数枚より対応可能
備考	アズスライスウェハも供給可能

ガラスウェハ

サイズ	φ6、φ8(その他サイズは応相談)
種類	テンパックス等供給可能
数量	1部数枚より対応可能
備考	下地SiO2等多層対応可能　(例：Si/SiO2(3000)/ Ta(3000Å))

金属膜付きシリコンウェハ

サイズ	φ8(その他サイズは応相談)
種類	Al、AlCu、Ta、Ti、Au、Pt、Au、Cu…等
数量	1部数枚より対応可能
備考	下地SiO2等多層対応可能　(例：Si/SiO2(3000)/ Ta(3000Å))

その他膜付きシリコンウェハ

サイズ	φ8 (その他サイズは応相談)
種類	ポリイミド、Low-K膜、PBO膜、BCB膜レジスト、ITO膜付け…等
数量	1部数枚より対応可能
備考	下地TEOS等の上に積層対応可能　(例：Si/TEOS(3000Å)PI(4µm))

カスタムサービス

カスタムTEGウェハ・ガラス試作

御希望のTEG用パターン付きウェハ・ガラスの提案が可能です。

対象	φ6～φ12inch シリコンウェハ・ガラス
プロセス	酸化、スパッタ、フォトリソ、エッチング、CVD、PVD、めっき、ボール搭載、印刷
数量	少量より相談可能
備考	ガラスウェハ上にもパターニング、めっき、ボール搭載可能 (お気軽にご相談ください。)

カスタム評価用基板設計・試作

御希望のTEG用パターン付き評価用基板の提案が可能です。

対象	TEG用リジット基板、MAP基板、フレキ、その他
プロセス	多層基板、ビルドアップ基板などフレキブルに設計・開発が可能
数量	少量より相談可能
備考	お気軽にご相談ください。

加工サービス

Auスタッドバンプ加工サービス

弊社TEGへのAuスタッドバンプ加工が可能です。

対象	貴社カスタム品、弊社TEGチップ、ALベタ等膜付きチップ
実績	50µmピッチ、パッド開口40µm迄の弊社TEGにて多数の実績有
数量	少量より相談可能
備考	お気軽にご相談ください。

BG加工サービス

シリコンウェハのBG加工を行います。

対象	弊社TEG・φ6～φ12inch ミラーウェハ
BG加工	ウェハ1枚分より対応致します。 BG後のストレスリリーフも対応可能です。
実績	φ8inch ミラーウェハで　t=25µm φ8inchTEG、ボール搭載(ボールt75µm)でt=50µm
備考	極薄加工品については、リングに貼り付けた状態での梱包形態になります。薄ウェハ用のプロトスキャリアケース収納になります。お気軽にご相談ください。

ダイシング加工・トレイ詰めサービス

シリコンウェハのダイシング加工、トレイ詰めを行います。

対象	弊社TEG、φ6～φ12inchミラーウェハ、ガラス
BG加工	ウェハ・ガラス1枚分より対応致します。 BG後のストレスリリーフも対応可能です。
実績	φ8inch ミラーウェハで 0.25mm■迄 φ8 inchTEG、ボール搭載(ボールt75µm)で t=50µm 薄ウェハの場合、バンプ付きで t=75µmで10mm■までのチップでチップ厚50µmtまでのピックアップ実績があります。
備考	お気軽にご相談ください。

その他のKIT製品

WALTS-TEG IP40-0101JY*Silicon Interposer

WALTS-TEG IP40A-0101JY*Silicon Interposer

WALTS-TEG IP80-0101JY*Silicon Interposer

WALTS-TEG IP40-0101JY*Silicon Interposer

WALTS-TEG IP40A-0101JY*Silicon Interposer

WALTS-TEG IP80-0101JY*Silicon Interposer

WALTS-KIT COF30-0101JY

SIPOS-TEG 製品詳細

シリコンウェハ

ガラスウェハ

金属膜付きシリコンウェハ

その他膜付きシリコンウェハ

カスタムTEGウェハ・ガラス試作

カスタム評価用基板設計・試作

Auスタッドバンプ加工サービス

BG加工サービス

ダイシング加工・トレイ詰めサービス

WALTS-TEG IP40-0101JY
*Silicon Interposer

WALTS-TEG IP40A-0101JY
*Silicon Interposer

WALTS-TEG IP80-0101JY
*Silicon Interposer

SIPOS-TEG　製品詳細