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SIPOS-TEG 製品詳細



TEG_SB04

Wafer Shot Map


Specification SB0401
SB0401
SB0402
SB0402
SB0403
SB0403
SB0404
SB0404
Wafer Size φ 8 inch
Wafer Thickness 725µm±25µm
Chip Size 3.0mm■ 3.0mm■ 3.0mm■ 3.0mm■
Pad Pitch 60μm Periphral 80μm Periphral 100μm Periphral 300μm Staggered
Number of Pad 168pad 120pad 96pad 256pad
Pad Size 46μm■ 60μm■ 80μm■ 32μm■
Pad Opening Size 40μm■ 50μm■ 70μm■ 26μm■
Scribe Width 100μm 100μm 100μm 100μm
Comb Dimension L/S = 7μm/7μm L/S = 10μm/10μm L/S = 12μm/12μm L/S = 5μm/5μm
Number of Comb 70 (35×2) 50 (25×2) 40 (20×2) 100 (50×2)
Interlayer
Dielectric Patter
φ1.0mm (Octagon) φ1.0mm (Octagon) φ1.0mm (Octagon) φ1.0mm (Octagon)



TEG_SB05_SB06

Wafer Shot Map


Specification SB0501
SB0501
SB0502
SB0502
SB0601
SB0601
SB0602
SB0602
Wafer Size φ 8 inch
Wafer Thickness 725µm±25µm
Chip Size 3.0mm■ 3.0mm■ 3.0mm■ 3.0mm■
Pad Pitch 150μm 300μm 150μm 300μm
Number of Pad 324pad 64pad 68pad 32pad
Daisy Chain Pad 180pad 32pad
Pad Size 100μm■ 190μm■ 100μm■ 190μm■
Pad Opening φ90μm φ180μm φ100μm φ180μm
Scribe Width 100μm 100μm 100μm 100μm
Comb Dimension L/S = 18μm/18μm L/S = 36μm/36μm
Number of Comb 28 (14×2) 14 (7×2)
Interlayer
Dielectric Patter
φ1.0mm (Octagon) φ1.0mm (Octagon)



TSV_TEST9_wafer_chip

Wafer Shot Map


Specification A
TSV_TEST9_chip_A
B
TSV_TEST9_chip_B
C
TSV_TEST9_chip_C
D
TSV_TEST9_chip_D
Wafer Size φ 8 inch
Wafer Thickness 725µm±25µm
Chip Size 20.0mm■ 20.0mm■ 20.0mm■ 20.0mm■
TSV Hole Diameter ●20μm ■20μm ●30μm ■30μm ●50μm ■50μm ●80μm ■80μm
TSV Pitch (X) 80μm 120μm 150μm 200μm
TSV Pitch (Y) 40μm, 50μm, 60μm 60μm, 80μm, 100μm 80μm, 100μm, 120μm 120μm, 150μm, 220μm