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TEG 製品一覧表


Material Au Solder Cu Ni Electroless
Ni/Au
Function
- +SnAg +Ni
+SnAg
- +SnAg
Form PLATE STUD PLATE MOUNT PLATE PLATE PLATE PLATE PLATE PLATE ---
Image ---
MB50 Daisy
MB60 Daisy
MB80 Daisy
AS8R Daisy
MB130A Daisy
MB6020 Daisy
 CC40   Daisy
IP40 Daisy/Vernier
Bump Short/
Breakdown Voltage
 IP40A
CC80 Daisy
IP80 Daisy
CC80TSV ●/◎ TSV
CC80MarkⅡ Daisy/Migration
CC80MarkⅣ Daisy
IP80MarkⅣ Daisy
WM40-0101 ---
WM40-0102 Daisy
WM40-0103 Daisy
IPWM40 Daisy/
Bump Short/
Break Down Voltage
HBM-T Daisy
IPHBM Daisy
FC150LC Daisy
FC120 Daisy
FC150 Daisy
FC150SC Daisy
FC200 Daisy
FC200SC Daisy
FBW ---
FBWA ---
WLP Daisy
Free Size Cut Daisy
ME Migration
STAC Stress/
Thermal/
HeatGeneration
STAC150FA
STAC300FA
HPW Thermal/
Heat Generation
HPW150FA
HPW300FA
HPWTSV TSV
HPW MarkⅡ Thermal/
Heat Generation/
Insulation Resistance
LCD30A Daisy
PWB Bondability

 ● Top Side / ◎Bottom Side

Cu Pillar Bump TEG

Solder Bump TEG

Electroless Plating Bump TEG



TEG 製品詳細


WALTS-TEG MB50-0101JY

MB50-0101JY
Specification Type-A Type-B
Wafer Size 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 7.3mm■ 7.3mm■
Pad Pitch 50μm 50μm
Function Daisy Chian Daisy Chian
Bump Size Au: 30µm■
Cu: 30µm■
Cu: φ25μm●
Bump Height (Cu30μm+SnAg15µm)
Number of Pad 544 pads/chip 544 pads/chip
Number of Chip 478 chips/wafer 478 chips/wafer
Polyimide (Option)
 Evaluation KIT WALTS-KIT MB50-0102JY_NCR【MAP】
WALTS-KIT MB50-0102JY_CR【MAP】
WALTS-KIT MB50-0104JY_CR【MAP】


WALTS-TEG MB60-0101JY

○○○○○○○○イメージ
Specification MB60-0101JY
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 7.3mm■
Pad Pitch 60μm
Function Daisy Chian
Bump Size
Bump Height
Number of Pad 448 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option)
Evaluation KIT ---


WALTS-TEG MB80-STG0101JY

○○○○○○○○イメージ
Specification TYPE-A  TYPE-B
Wafer Size 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 7.3mm■ 7.3mm■
Pad Pitch 80μm Staggerd 80μm Staggerd
Function Daisy Chian Daisy Chian
Bump Size 38μm■
Bump Height (Wire Bonding) (Cu30μm+SnAg15μm)
Number of Pad 648 pads/chip
82 pads × 4 (Outer Line)
80 pads × 4 (Innter Line)
648 pads/chip
82 pads × 4 (Outer Line)
80 pads × 4 (Innter Line)
Number of Chip 478 chips/wafer 478 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT CC80-0104JY (ModelⅣ)


WALTS-TEG AS8R

TEG_AS8R
Specification AS8R
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 3.5 mm■
Pad Pitch 120μm
Function Daisy Chian
Bump Size
Bump Height
Number of Pad 96 pads/chip (Outer Line)
88 pads/chip (Inner Line)
Number of Chip 2266 chips/wafer
Polyimide (Option)
Evaluation KIT ---


WALTS-TEG MB130A-STG0101JY

TEG_MB130-STG0101JY
Specification MB130A
TYPE-A TYPE-B
Wafer Size 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 2.13 mm■ 2.13 mm■
Pad Pitch 130μm 130μm
Function Daisy Chian Daisy Chian
Bump Size Φ70µm
Bump Height (Wire Bonding)
(Au Stud Bump)
(Cu30μm+SnAg15μm)
Number of Pad 108 pad/chip
15 pads× 4 (outer Line)
12 pads× 4 (Inner Line)
108 pad/chip
15 pads× 4 (outer Line)
12 pads× 4 (Inner Line)
Number of Chip 6060 chips/wafer 6060 chips/wafer
Polyimide (Option)
Evaluation KIT --- ---


WALTS-TEG MB6020-0102JY

TEG_MB6020-0101JY
Specification MB6020-0102JY
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 3.0 mm■
Pad Pitch 60 / 55 / 50 / 45 / 40 / 35 / 30 / 25 / 20 μm
Function Daisy Chian
Bump Size
Bump Height
Number of Pad (40×4) (40×4) (38×4)
(38×4) (36×4) (34×4)
(30×4) (26×4) (18×4)
Number of Chip 3016 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---


WALTS-TEG CC40-0101JY

TEG_CC40-0101JY
Specification CC40-0101JY
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 7.3 mm■
Pad Pitch Model Ⅰ: 40μm Staggered + 40μm Full Area 
Model Ⅱ: 40μm Staggered          
Function Daisy Chian
Bump Size Model Ⅰ: 22μm●
Model Ⅱ: 22μm●
Bump Height (Cu15μm+SnAg10μm)
Number of Pad Model Ⅰ: 29576 pads/chip
Model Ⅱ: 1352 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option) ---
Evaluation KIT WALTS-TEG IP40-0101JY (Silicon Interposer)
WALTS-TEG IP40A-0101JY (Silicon Interposer)


WALTS-TEG IP40-0101JY

TEG_IP40-0101JY
Specification IP40-0101JY(ModelⅠ / ModelⅡ)
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 10.0 mm■
Pad Pitch (1) 40μm pitch Full area + Staggered (Model Ⅰ)
40μm pitch Staggered (Model Ⅱ)    
(2) 250μm pitch Periphera (Outer Pad)     
Function Daisy Chian
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size ---
Bump Height ---
Number of Pad Model Ⅰ:(1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
Model Ⅱ:(1) 1352 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip 228 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---


WALTS-TEG IP40A-0101JY

TEG_IP40A-0101JY
Specification IP40A-0101JY(ModelⅠ)
Wafer Size 12 inch
Wafer Thickness 775±25μm
Chip Size 10.0 mm■
Pad Pitch (1) 40μm pitch Full area + Staggered (ModelⅠ)
(2) 250μm pitch Periphera (Outer Pad)     
Function Daisy Chian
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size ---
Bump Height ---
Number of Pad Model Ⅰ:(1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip 616 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---


WALTS-TEG CC80-0101JY  >> CONCEPT

○○○○○○○○イメージ
Specification CC80-0101JY
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 7.3 mm■
Pad Pitch 80μm Staggered (Periphera)
300μm Full Area (Center Core)
Function Daisy Chian
Bump Size Model Ⅰ: 38µm■ or φ42μm●
Model Ⅳ: 38µm■
Bump Height (Cu30μm+SnAg15μm)
Number of Pad Model Ⅰ: 1048 pads/chip
Model Ⅳ: 648 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-TEG IP80-STG0101JY (Silicon Interposer)
WALTS-KIT CC80-0104JY


WALTS-TEG IP80-0101JY  >> CONCEPT

○○○○○○○○イメージ
Specification IP80-0101JY
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 10.0 mm■
Pad Pitch (1) 80μm Staggered (Inner Pad)
(2) 300μm Full Area (Center Core)
(3) 250μm Periphera (Outer Pad)
Function Daisy Chian
Bump Size
Bump Height
Number of Pad (1) 648 pads/chip
(2) 400 pads/chip
(3) 124 pads/chip
Number of Chip Cu piller 256chip/wafer /ElectrolessNiAu 256chip/wafer
Polyimide (Option)
Evaluation KIT ---


WALTS-TEG CC80TSV-0101JY  >> CONCEPT

TEG_CC80TSV
Specification CC80TSV-1 CC80TSV-2
Wafer Size 8 inch 8 inch
Chip Thickness 100μm 100μm
Chip Size 7.3 mm■ 7.3 mm■
Pad Pitch 80μm Staggered (Periphera)
300μm Full Area (Center Core)
80μm Staggered (Periphera)
300μm Full Area (Center Core)
TSV Hole Diameter φ40µm● φ40µm●
Top
Side
Electrode Electroless Ni/Au Cu+SnAg
 Bump Size φ48μm●(Option: φ42μm●) 38μm■ (Option: φ42μm●)
 Bump Height (8~12µm) (Cu20μm+SnAg15μm)
Bottom
Side
Electrode Electroless Ni/Au Electroless Ni/Au
 Bump Size φ48μm●(Option: φ42μm●) φ48μm●(Option: φ42μm●)
 Bump Height (8~12µm) (8~12µm)
Number of Chip 478 chips/wafer 478 chips/wafer
Evaluation KIT WALTS-TEG CC80-0101JY
WALTS-TEG IP80-0101JY (Silicon Interposer)


WALTS-TEG CC80MarKⅡ-0101JY

TEG_CC80MarkII
Specification CC80MarkⅡ-0101JY【STD】
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 12.0 mm■
Pad Pitch 80μm Staggered (Periphera)
200μm Full Area (Center Core)
Function Daisy Chain & Migration
Bump Size φ31μm●
Bump Height (Cu30μm+SnAg15μm)
Number of Pad 1660 pads/chip (Periphera)
2916 pads/chip (Center Core)
Number of Chip 177 chips/wafer
Polyimide (Option) ---
Evaluation KIT WALTS-KIT CC80MarkⅡ-0201JY


WALTS-TEG CC80MarkIV-0101JY  >> CONCEPT

TEG_CC80TSV
Specification CC80MarkIV-0101JY
Wafer Size 8inch
Wafer Thickness 725±25μm
 Chip Chip A Chip B
Chip Size 6.0 mm × 10.0 mm 4.0 mm × 10.0 mm
 Pad Pitch
① 40μm[10Row]×50μm[192Row] (Peripheral)
② 80μm staggered[3Row] (Center core)
③ 150μm Min. Lattice
Function Daisy Chain
Electrode Cu Pillar
Bump Size φ25μm●
Number of Bump/Pad ①1920bumps/1920pads
② 687 bumps/ 687 pads
③1743bumps/1743pads
①1920bumps/1920pads
② 531 bumps/ 531 pads
③ 978 bumps/ 978 pads
Number of Chip Chip A:228chips/wafer  Chip B:228chips/wafer
Evaluation KIT WALTS-TEG IP80MarkIV-0101JY (Sillicon Interposer)


WALTS-TEG IP80MarkIV-0101JY  >> CONCEPT

TEG_CC80TSV
Specification IP80MarkIV-0101JY
Wafer Size 8inch
Wafer Thickness 725±25μm
Chip Size 15.0 mm × 15.0 mm
 Pad Pitch
① 40μm[10Row]×50μm[192Row]×2 (Peripheral)
② 80μm staggered[3Row] (Center core)
③ 150μm Min. Lattice
④ 300μm (Staggered)
Function Daisy Chain
Electrode Electroless Ni/Au plating
Bump Size ①27μm● ②27μm● ③27μm● ④141μm■
Number of Bump/Pad ①3840bumps/3840pads
②1172bumps/1172pads
③2721bumps/2721pads
④328bumps/328pads
Number of Chip 97 chips/wafer
Evaluation KIT ---


WALTS-TEG WM40-0101JY  CONCEPT

TEG_CC80TSV
Specification WM40-0101JY
Wafer Size 8inch 
Wafer Thickness 50μm
Chip Size 10 mm × 8 mm
Function ---
Top
Side
Electrode Cu Pillar
Bump Size φ20μm●
Bump Height (Cu15μm + SnAg8μm)
Bump Pitch ① 40μm ②300μm
Number of Bump ①1200 bumps ② 714 bumps
Bottom
Side
Electrode Cu Post
Bump Size φ26μm●
Bump Height (Cu 6μm)
Bump Pitch ① 40μm ②300μm
Number of Bump ①1200 bumps ② 714 bumps
Number of Chip 312 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY

 

WALTS-TEG WM40-0102JY  CONCEPT 

TEG_CC80TSV
Specification WM40-0102JY
Wafer Size 8inch
Wafer Thickness 725±25μm
Chip Size 10 mm × 8 mm
Function Daisy Chain
Electrode Cu Pillar
 Bump Size φ20μm●
Bump Height (Cu15μm + SnAg8μm)
Bump Pitch ① 40μm ②300μm
Number of Bump ①1200 bumps ② 714 bumps
Number of Chip 312 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY


WALTS-TEG WM40-0103JY

TEG_WM40-0103JY
Specification WM40-0103JY
Wafer Size 8inch
Wafer Thickness 725±25μm
Chip Size 10 mm × 8 mm
Function Daisy Chain
Electrode Cu Pillar
Bump Size φ20μm●
Bump Height (Cu15μm + SnAg8μm)
Bump Pitch ① 40μm ②300μm
Number of Bump I/O area
40μm pitch x 1200 bamps
Dummy area
300μm pitch x 714 bumps
Number of Chip 312 chips/wafer
Evaluation KIT ---


WALTS-TEG IPWM40-0101JY

TEG_IPWM40-0101JY
Specification IPWM40-0101JY
Wafer Size 8inch
Wafer Thickness 725±25μm
Chip Size 13.0mm■
Function Daisy Chain
Bump Short Check
Break Down Voltage Check Between Bump
Electrode Electroless Ni/Au ptating
Bump Size φ25μm●
Bump Height 2.5μm
Bump Pitch ① 40μm ②300μm
Number of Bump ①1200 Bumps ②714 Bumps
Probe pad 72pad
(same pad area as WM40-0103JY)
Number of Chip 148 chips/wafer
Evaluation KIT ---


WALTS-TEG HBM-T-0100JY >> CONCEPT

TEG_HBM-T-0100JY
Specification HBM-T-0100JY
Wafer Size 8inch
Wafer Thickness 725±25μm
Chip Size 10.0mm×8.0mm
Scribe Width 120μm
Base Layer P-TEOS
Metal Layer TiN/AlCu
PV Layer HDP / P-SiN
PV Opening φ8μm
Pad Size 27μm■
Bump Size Cu5μm×SnAg12μm, φ18μm
Number of Pad I/O area 7200 pad Dummy area 6544 pad
Number of Bump I/O area 7200 bump Dummy area 7456 bump
Number of Chip 312 Chip / Wafer
Evaluation KIT ---


WALTS-TEG IPHBM-0100JY >> CONCEPT

TEG_IPHBM-0100JY
Specification IPHBM-0100JY
Wafer Size 8inch
Wafer Thickness 725±25μm
Chip Size 12.0mm×10.0mm
Scribe Width 120μm
Base Layer P-TEOS
Metal Layer TiN/AlCu
PV Layer HDP / P-SiN
PV Opening φ18μm
Connection Pad Size 27μm■
Probe Pad Size 300μm■
Bump Size NiAu2.5μm×, φ23μm
Number of Pad I/O area : 7200 pad Dummy area : 7456 pad Probe pad : 96 pad
Number of Chip 204 Chip / Wafer
Evaluation KIT ---


WALTS-TEG FC150LC-0102JY

TEG_FC150LCJY_Si
Specification FC150LC-0101JY
Wafer Size 12 inch
Wafer Thickness 775±25μm
Chip Size 25.0mm■
Pad Pitch 150 μm (Area)
Function Daisy Chian
Bump Size φ75µm●
Bump Height Cu pillar (Cu30µm+SnAg15µm)
Number of Pad 25921 pads/chip (161×161)
Number of Chip 89 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT FC150LC-0302JY

 

WALTS-TEG FC120JY

TEG_FC120JY_Si
Specification TYPE-B
Wafer Size 8 inch
Wafer Thickness 775±25μm
Chip Size 10.0mm■
Pad Pitch 120μm
Function Daisy Chian
Pad Size 80µm■
Passivation opening φ20µm●
Polyimide opeinng φ40µm●
UBM Size φ65µm●
Bump Size φ60µm●
Number of Pad 5776 pads/chip (76×76)
Number of Chip 208 chips/wafer
Evaluation KIT WALTS-KIT FC120


WALTS-TEG FC150JY

TEG_FC150JY_Si
Specification Type-A Type-B
Wafer Size 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 150 μm (Area) 150 μm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ85µm● φ75µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 3721 pads/chip (61×61) 3721 pads/chip (61×61)
Number of Chip 208 chips/wafer 208 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0104JY 2×2
WALTS-KIT FC150R-0101JY 2×2


WALTS-TEG FC150SCJY

TEG_FC150SCJY
Specification Type-A Type-B
Wafer Size 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 5.02mm■ 5.02mm■
Pad Pitch 150 μm (Area) 150 μm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ90µm● φ80µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 784 pads/chip (28×28) 784 pads/chip (28×28)
Number of Chip 832 chips/wafer 832 chips/wafer
Polyimide (Option)
Evaluation KIT ---


WALTS-TEG FC200JY

TEG_FC200JY_Si
Specification Type-A Type-B
Wafer Size 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 200μm (Area) 200μm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ100µm● φ90µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 2116 pads/chip (46×46) 2116 pads/chip (46×46)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY 2×2
WALTS-KIT FC200-0102JY 2×2


WALTS-TEG FC200SCJY

TEG_FC200SCJY
Specification Type-A Type-B
Wafer Size 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 5.02mm■ 5.02mm■
Pad Pitch 200μm (Area) 200μm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ100µm● φ90µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 484 pads/chip (22×22) 484 pads/chip (22×22)
Number of Chip 832 chips/wafer 832 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT FC200SC-0202JY 3×3


WALTS-TEG FBW200A-0000JY  UPDATE

WALTS-TEG FBW150-0001JY

WALTS-TEG FBW130-0001JY

WALTS-TEG FBW100-0001JY

WALTS-TEG FBW80-0001JY

WALTS-TEG FBW40A-0001JY

TEG_FBW200
Specification FBW200A FBW150 FBW130 FBW100 FBW80 FBW40A
Wafer Size 12 inch 8 inch 8 inch 8 inch 8 inch 12 inch
Wafer Thickness 775±25μm 725±25μm 725±25μm 725±25μm 725±25μm 775±25μm
Bump Pitch 200μm 150μm 130μm 100μm 80μm 40μm
Electrode Cu Pillar Cu Pillar Cu Pillar Cu Pillar Cu Pillar Cu Pillar
Bump Size φ90μm φ75μm φ65μm φ50μm φ40μm φ20μm
Bump Height (Max.60μm) (Max.60μm) (Max.60μm) (Max.60μm) (Max.50μm) (Max.45μm)


WLP TEG (0.5mm pitch & 0.4mm pitch & 0.3mm pitch)

WLP_0.3mm
Specification 0.5mm pitch BGA 0.4mm pitch BGA 0.3mm pitch BGA
Wafer Size 8 inch 8 inch 8 inch
Wafer Thickness 400±20μm 400±20μm 400±20μm
Chip Size 6.0mm■ 6.0mm■ 6.0mm■
BGA Pitch 500μm 400μm 300μm
Function Daisy Chain Daisy Chain Daisy Chain
Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump Ball Mounted Solder Bump
Bamp Size (φ300µm●) (φ260µm●) (φ200µm●)
Number of Pad 112 pins/chip 144 pins/chip 264 pins/chip
Number of Chip 714 chips/wafer 714 chips/wafer 712 chips/wafer


WLP TEG (Free Size Cut TEG:TEG0306,TEG03507,TEG0408,TEG0510)

WLP_TEG0306
Specification TEG0306 TEG03507 TEG0408 TEG0510
Wafer Size 8 inch 8 inch 8 inch 8 inch
Wafer Thickness 400μm 400μm 400μm 400μm
Cut Size (Min.) 600μm■ 700μm■ 800μm■ 1000μm■
Pad Pitch 300μm 350μm 400μm 500μm
Function Daisy Chain Daisy Chain Daisy Chain Daisy Chain
Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump Ball Mounted Solder Bump Ball Mounted Solder Bump
Post Size 180μm 210μm 200μm 250μm
Number of Chip 79257 chips/wafer 58490 chips/wafer 44161 chips/wafer 28212 chips/wafer


WALTS-TEG ME0102JY

 [for Migration Test]

TEG_ME0102
Specification WALTS-TEG ME0102JY
Wafer Size 12 inch
Chip Size 20mm×25mm
Chip Name Chip_10_15 Chip_20_25 Chip_30_35
Metal Height 5.5μm
Facing Legth 3mm
Line/Space 15μm/10μm 15μm/15μm 15μm/20μm 15μm/25μm 15μm/30μm 15μm/35μm
Pitch 25μm 30μm 35μm 40μm 45μm 50μm
Number of Chip 34 chips/wafer 40 chips/wafer 34 chips/wafer


WALTS-TEG STAC-0101JY 

 [for Stress & Thermal Resistance Analysis]

TEG_STAC-0101JY
Specification STAC-0101JY
Wafer Size 6 inch(Orientation Flat)
Wafer Thickness 550±25μm
Chip Size 3.0mm■
Pad Pitch 300μm
Function Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad 32 pads/chip
Number of Chip 1596 chips/wafer
Polyimide (Option)
<Option> Back Side Metallization
Evaluation KIT WALTS-KIT STAC(S)-0202JY


WALTS-TEG STACTEG-150FA-0101JY

WALTS-TEG STACTEG-300FA-0101JY

TEG_STACTEG
Specification STACTEG-150FA
STACTEG-300FA
Base Wafer:WALTS-TEG STAC-0101JY 
Wafer Size 6 inch (Orientation Flat) 6 inch (Orientation Flat)
Wafer Thickness 550±25μm 550±25μm
Chip Size 3.0mm■ 3.0mm■
Pad Pitch 150μm 300μm
Function Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Bump Size φ110µm● φ110µm●
Bump Height (Ni5μm+SnAg75µm) (Cu50μm+SnAg10μm)
Number of Pad 32 pads/chip 32 pads/chip
Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps
Number of Chip 1596 chips/wafer 1596 chips/wafer
Polyimide (Option)
<Option> Back Side Metallization Back Side Metallization
Evaluation KIT WALTS-KIT STAC(S)-0202JY


WALTS-TEG HPW-0101JY

 [for Thermal Resistance Analysis at High Power]

TEG_HPW-0101JY
Specification HPW-0101JY
Wafer Size 8 inch(Notch)
Wafer Thickness 725±25μm
Chip Size 3.0mm■
Pad Pitch 300μm
Function Thermal Analysis by Diode
Heat Generarion by Resistance
Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad 32 pads/chip
Number of Chip 2964 chips/wafer
Polyimide (Option)
 <Maximum Output> Max. 14.5W/Chip
<Option> Back Side Metallization


WALTS-TEG HPWTEG-150FA-0101JY

WALTS-TEG HPWTEG-300FA-0101JY

TEG_FC200SCJY
Specification HPWTEG-150FA HPWTEG-300FA
Base Wafer:WALTS-TEG HPW-0101JY 
Wafer Size 8 inch(Notch) 8 inch(Notch)
Wafer Thickness 725±25μm 725±25μm
Chip Size 3.0mm■ 3.0mm■
Pad Pitch 150μm 300μm
Function Thermal Analysis by Diode
Heat Generarion by Resistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Bump Size φ110µm● φ110µm●
Bump Height (Ni5μm+SnAg75µm) (Cu50μm+SnAg10μm)
Number of Pad 32 pads/chip 32 pads/chip
Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps
Number of Chip 2964 chips/wafer 2964 chips/wafer
<Option> Back Side Metallization Back Side Metallization
Evaluation KIT ---


WALTS-TEG HPW TSV-0101JY

TEG_CC80TSV
Specification HPW TSV-0101JY
Base Wafer:WALTS-TEG HPW-0101JY(SiN) 
Wafer Size 8 inch(Notch)
Wafer Thickness 100μm
Chip Size 3.0mm■
Top
Side
Electrode Cu Pillar
Bump Pitch 300μm
Bump Size φ100μm●
Bump Height (Cu50μm+SnAg10μm)
Number of Bump 32 bumps + 64 Dummy bumps
TSV Via Size φ90μm●
Bottom
Side 
Electrode Electroless Ni/Au Plating
Bump Pitch 300μm
Bump Size φ100μm●
Bump Height (8μm)
Number of Bump 32 bumps
Number of Chip 2964 chips/wafer
Evaluation KIT ---


WALTS-TEG HPW MarkⅡ-0101JY

TEG_HPW-Mark2_0101JY
Specification HPW MarkⅡ-0101JY
Wafer Size 8 inch(Notch)
Wafer Thickness 725±25μm
Chip Size 10.0mm■
Pad Pitch
(Passivation opening)
Pad①~③ 0.4mm■ (0.3mm■)
Pad④ 2.72mm×0.5mm (2.32mm×0.3mm)
Scribe line width 120μm
Function Thermal Analysis by Diode
Heat Genaration by Resistance
Insulation Resistance Test by High Voltage Plate
Electrode Al Pad
Number of Pads 12 pads
Number of Chips 244 chips/wafer
Maximum Output Max. 55W/Chip
<Option> Back Side Metallization

 


WALTS-TEG LCD30A-0101JY

TEG_LCD30-0101JY
Specification LCD30A-0101JY
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 15.1 mm × 1.6 mm
Pad Pitch 30μm
Function Daisy Chian
Bump Size 20µm×100µm
Bump Height 15or20
Number of Pad 726 pads/chip
Number of Chip 1056 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT LCD30-0101JY
WALTS-KIT COF30-0101JY


WALTS-TEG PWB0101JY

TEG_PWB-0101JY
Specification TYPE-A TYPE-B
Wafer Size φ 6 inch φ 6 inch
Wafer Thickness 625±25μm 625±25μm
Chip Size 6.0mm■ 6.0mm■
Metal Thickness Al-Si 3μm Al-Si 4.5μm
Function Bondability Check Bondability Check
Pad config Plane Plane
Pad Size 5060×2420μm
270×5300μm
5060×2420μm
270×5300μm
Passivation Opening 5060×2420μm
250×5280μm
5060×400μm
250×5280μm
Scribe width 100μm 100μm