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TEG 製品一覧表


Material Au Solder Cu Ni Electroless
Ni/Au
Function
- +SnAg +Ni
+SnAg
+Ni
+Au
- +SnAg
Form PLATE STUD PLATE MOUNT PLATE PLATE PLATE PLATE PLATE PLATE PLATE ---
Image ---
MB50 Daisy
MB60 Daisy
MB80 Daisy
MB130 Daisy
 CC40   Daisy
IP40 Daisy/Vernier
Bump Short/
Breakdown Voltage
 IP40A
CC80 Daisy
IP80 Daisy
CC80TSV ●/◎ TSV
CC80MarkⅡ Daisy/Migration
CC80MarkⅡWM Daisy/Migration
WM40-0101 ---
CC80MarkⅢ Daisy/Migration
WM40-0102 Daisy
CC80MarkⅣ Daisy
IP80MarkⅣ Daisy
FC150LC Daisy
FC150(Si) Daisy
FC150(Glass) ---
FC150SC Daisy
FC200(Si)
Daisy
FC200(Glass) ---
FC200SC Daisy
FC500G ---
FBW ---
WLP Daisy
MC03 Daisy
ME Migration
STAC Stress/
Thermal/
HeatGeneration
STAC150FA
STAC300FA
HPW Thermal/
Heat Generation
HPW150FA
HPW300FA
HPWTSV TSV
LCD30 Daisy/
Breakdown Voltage
PWB Bondability
 ● Top Side / ◎Bottom Side

Cu Pillar Bump TEG

Solder Bump TEG

Electroless Plating Bump TEG



TEG 製品詳細


WALTS-TEG MB50-0101JY

MB50-0101JY
Specification Type-A Type-B Type-C (Glass)
Wafer Size φ 8 inch φ 8 inch φ 8 inch
Wafer Thickness 725±25μm 725±25μm 700±70μm
Chip Size 7.3mm■ 7.3mm■ 7.3mm■
Pad Pitch 50μm 50μm 50μm
Function Daisy Chian Daisy Chian
Bump Size Au: 30µm■
Cu: 30µm■
Cu: φ25μm●
Cu: 30µm■
Cu: φ25μm●
Bump Height (Cu30μm+SnAg15µm) (Cu30μm+SnAg15μm)
Number of Pad 544 pads/chip 544 pads/chip
Number of Chip 478 chips/wafer 478 chips/wafer 478 chips/wafer
Polyimide (Option)
 Evaluation KIT WALTS-KIT MB50-0102JY_NCR【Standard】
WALTS-KIT MB50-0104JY_CR【Standard】
WALTS-KIT MB50-0105JY_CR【Standard】
WALTS-KIT MB50-0102JY_NCR【MAP】
WALTS-KIT MB50-0103JY_CR【MAP】
WALTS-KIT MB50-0104JY_CR【MAP】


WALTS-TEG MB60-0101JY

○○○○○○○○イメージ
Specification MB60-0101JY
Wafer Size φ 8 inch
Wafer Thickness 725±25μm
Chip Size 7.3mm■
Pad Pitch 60μm
Function Daisy Chian
Bump Size
Bump Height
Number of Pad 448 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option)
Evaluation KIT ---


WALTS-TEG MB80-STG0101JY

○○○○○○○○イメージ
Specification TYPE-A  TYPE-B
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 7.3mm■ 7.3mm■
Pad Pitch 80μm Staggerd 80μm Staggerd
Function Daisy Chian Daisy Chian
Bump Size 38μm■
Bump Height (Wire Bonding) (Cu30μm+SnAg15μm)
Number of Pad 648 pads/chip
82 pads × 4 (Outer Line)
80 pads × 4 (Innter Line)
648 pads/chip
82 pads × 4 (Outer Line)
80 pads × 4 (Innter Line)
Number of Chip 478 chips/wafer 478 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT CC80-0104JY (ModelⅣ)


WALTS-TEG AS8R

TEG_AS8R
Specification AS8R
Wafer Size φ 8 inch
Wafer Thickness 725±25μm
Chip Size 3.5 mm■
Pad Pitch 120μm
Function Daisy Chian
Bump Size
Bump Height
Number of Pad 96 pads/chip (Outer Line)
88 pads/chip (Inner Line)
Number of Chip 2266 chips/wafer
Polyimide (Option)
Evaluation KIT ---


WALTS-TEG MB130-STG0101JY

WALTS-TEG MB130A-STG0101JY NEW!!

TEG_MB130-STG0101JY
Specification MB130 MB130A
TYPE-A TYPE-B 
Wafer Size φ 6 inch φ 6 inch φ 8 inch
Wafer Thickness 550±25μm 550±25μm 725±25μm
Chip Size 2.13 mm■ 2.13 mm■ 2.13 mm■
Pad Pitch 130μm 130μm 130μm
Function Daisy Chian Daisy Chian Daisy Chian
Bump Size 70µm■
Bump Height (Wire Bonding)
(Au Stud Bump)
(Cu30μm+SnAg15μm) (Wire Bonding)
(Au Stud Bump)
Number of Pad 108 pad/chip
15 pads× 4 (outer Line)
12 pads× 4 (Inner Line)
108 pad/chip
15 pads× 4 (outer Line)
12 pads× 4 (Inner Line)
108 pad/chip
15 pads× 4 (outer Line)
12 pads× 4 (Inner Line)
Number of Chip 3300 chips/wafer 3300 chips/wafer 6060 chips/wafer
Polyimide (Option)
Evaluation KIT ---
--- 


WALTS-TEG MB6020-0102JY 

TEG_MB6020-0101JY
Specification MB6020-0102JY
Wafer Size φ 8 inch
Wafer Thickness 725±25μm
Chip Size 3.0 mm■
Pad Pitch 60 / 55 / 50 / 45 / 40 / 35 / 30 / 25 / 20 μm
Function Daisy Chian
Bump Size
Bump Height
Number of Pad (40×4) (40×4) (38×4)
(38×4) (36×4) (34×4)
(30×4) (26×4) (18×4)
Number of Chip 3016 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---


WALTS-TEG CC40-0101JY NEW!!

TEG_CC40-0101JY
Specification CC40-0101JY
Wafer Size φ 8 inch
Wafer Thickness 725±25μm
Chip Size 7.3 mm■
Pad Pitch Model Ⅰ: 40μm Staggered + 40μm Full Area 
Model Ⅱ: 40μm Staggered          
Function Daisy Chian
Bump Size Model Ⅰ: 22μm●
Model Ⅱ: 22μm●
Bump Height (Cu15μm+SnAg10μm)
Number of Pad Model Ⅰ: 29576 pads/chip
Model Ⅱ: 1352 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option) ---
Evaluation KIT WALTS-TEG IP40-0101JY (Silicon Interposer)
WALTS-TEG IP40A-0101JY (Silicon Interposer)


WALTS-TEG IP40-0101JY NEW!!

TEG_IP40-0101JY
Specification IP40-0101JY(ModelⅠ / ModelⅡ)
Wafer Size φ 8 inch
Wafer Thickness 725±25μm
Chip Size 10.0 mm■
Pad Pitch (1) 40μm pitch Full area + Staggered (Model Ⅰ)
40μm pitch Staggered (Model Ⅱ)    
(2) 250μm pitch Periphera (Outer Pad)     
Function Daisy Chian
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size ---
Bump Height ---
Number of Pad Model Ⅰ:(1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
Model Ⅱ:(1) 1352 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip 228 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---


WALTS-TEG IP40A-0101JY NEW!!

TEG_IP40A-0101JY
Specification IP40A-0101JY(ModelⅠ)
Wafer Size φ 12 inch
Wafer Thickness 775±25μm
Chip Size 10.0 mm■
Pad Pitch (1) 40μm pitch Full area + Staggered (ModelⅠ)
(2) 250μm pitch Periphera (Outer Pad)     
Function Daisy Chian
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size ---
Bump Height ---
Number of Pad Model Ⅰ:(1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip 616 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---


WALTS-TEG CC80-0101JY  >> CONCEPT
○○○○○○○○イメージ

Specification CC80-0101JY
Wafer Size φ 8 inch
Wafer Thickness 725±25μm
Chip Size 7.3 mm■
Pad Pitch 80μm Staggered (Periphera)
300μm Full Area (Center Core)
Function Daisy Chian
Bump Size Model Ⅰ: 38µm■ or φ42μm●
Model Ⅱ: 38µm■
Model Ⅲ: 38µm■
Model Ⅳ: 38µm■
Bump Height (Cu30μm+SnAg15μm)
Number of Pad Model Ⅰ: 1048 pads/chip
Model Ⅱ: 904 pads/chip
Model Ⅲ: 728 pads/chip
Model Ⅳ: 648 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-TEG IP80-STG0101JY (Silicon Interposer)
WALTS-KIT CC80-0104JY


WALTS-TEG IP80-0101JY  >> CONCEPT

○○○○○○○○イメージ
Specification IP80-0101JY
Wafer Size φ 8 inch
Wafer Thickness 725±25μm
Chip Size 10.0 mm■
Pad Pitch (1) 80μm Staggered (Inner Pad)
(2) 300μm Full Area (Center Core)
(3) 250μm Periphera (Outer Pad)
Function Daisy Chian
Bump Size
Bump Height
Number of Pad (1) 648 pads/chip
(2) 400 pads/chip
(3) 124 pads/chip
Number of Chip 228 chips/wafer
Polyimide (Option)
Evaluation KIT ---


WALTS-TEG CC80TSV-0101JY  >> CONCEPT

TEG_CC80TSV
Specification CC80TSV-1 CC80TSV-2
Wafer Size φ 8 inch φ 8 inch
Chip Thickness 100μm 100μm
Chip Size 7.3 mm■ 7.3 mm■
Pad Pitch 80μm Staggered (Periphera)
300μm Full Area (Center Core)
80μm Staggered (Periphera)
300μm Full Area (Center Core)
TSV Hole Diameter φ40µm● φ40µm●
Top
Side
Electrode Electroless Ni/Au Cu+SnAg
 Bump Size φ48μm●(Option: φ42μm●) 38μm■ (Option: φ42μm●)
 Bump Height (8~12µm) (Cu20μm+SnAg15μm)
Bottom
Side
Electrode Electroless Ni/Au Electroless Ni/Au
 Bump Size φ48μm●(Option: φ42μm●) φ48μm●(Option: φ42μm●)
 Bump Height (8~12µm) (8~12µm)
Number of Chip 478 chips/wafer 478 chips/wafer
Evaluation KIT WALTS-TEG CC80-0101JY
WALTS-TEG IP80-0101JY (Silicon Interposer)


WALTS-TEG CC80MarKⅡ-0101JY

TEG_CC80MarkII
Specification CC80MarkⅡ-0101JY【STD】
Wafer Size φ 8 inch
Wafer Thickness 725±25μm
Chip Size 12.0 mm■
Pad Pitch 80μm Staggered (Periphera)
200μm Full Area (Center Core)
Function Daisy Chain & Migration
Bump Size φ31μm●
Bump Height (Cu30μm+SnAg15μm)
Number of Pad 1660 pads/chip (Periphera)
2916 pads/chip (Center Core)
Number of Chip 177 chips/wafer
Polyimide (Option) ---
Evaluation KIT WALTS-KIT CC80MarkⅡ-0201JY


WALTS-TEG CC80MarkII WM-0101JY  >> CONCEPT NEW!!

TEG_CC80TSV
Specification CC80MarkII WM-0101JY
※Base Wafer:WALTS TEG CC80MarkII-0101JY
 Wafer Size 8inch 
Wafer Thickness 100μm
Chip Size 10 mm × 8 mm
Function Daisy Chain & Migration(Top Side)
Top
Side
Electrode Cu Pillar
 Bump Size φ31μm●
 Bump Height (Cu 20μm + SnAg 15μm)
Bottom
Side
Electrode Cu Post
 Bump Size φ26μm●
Bump Pitch ① 40μm ②300μm 
 Number of Bump ①1200 bumps ② 714 bumps 
 Bump Height (Cu 6μm)
Number of Chip 177 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
WALTS-TEG WM40-0101JY


WALTS-TEG WM40-0101JY  >> CONCEPT NEW!!

TEG_CC80TSV
Specification WM40-0101JY
Wafer Size 8inch 
Wafer Thickness 50μm
Chip Size 10 mm × 8 mm
Function ---
Top
Side
Electrode Cu Pillar
Bump Size φ20μm●
Bump Height (Cu15μm + SnAg8μm)
Bump Pitch ① 40μm ②300μm
Number of Bump ①1200 bumps ② 714 bumps
Bottom
Side
Electrode Cu Post
Bump Size φ26μm●
Bump Height (Cu 6μm)
Bump Pitch ① 40μm ②300μm
Number of Bump ①1200 bumps ② 714 bumps
Number of Chip 312 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY


WALTS-TEG CC80MarkⅢ‐0101JY  >> CONCEPT NEW!!

TEG_CC80TSV
Specification CC80MarkⅢ-0101JY
Wafer Size 6inch 
Wafer Thickness 100μm or 350μm
Chip Size 12.0 mm × 12.0 mm
Function Daisy Chain & Migration(Top Side)
Daisy Chain (Bottom Side)
Top
Side
Electrode Cu Pillar
Bump Size φ31μm●
Pad Pitch ① 80μm Three Rows Staggered (Peripheral)
② 200μm Full Area(Center Core)
Number of Bump/Pad ① 1660bumps/1660pads (Peripheral)
② 2916bumps/2916pads(Center Core)
Bottom
Side
Electrode Electroless Ni/Au
Bump Size φ20μm●
Bump Pitch ① 40μm (Center Core)
② 300μm (Peripheral)
③ 550μm (Outer Pad)
Number of Bump ① 120 pads (Center Core)
② 714 pads (Peripheral)
③ 40 pads (Outer Pad)
Number of Chip 89 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
WALTS-TEG WM40-0102JY


WALTS-TEG WM40-0102JY  >> CONCEPT NEW!!

TEG_CC80TSV
Specification WM40-0102JY
Wafer Size 8inch
Wafer Thickness 725±25μm
Chip Size 10 mm × 8 mm
Function Daisy Chain
Electrode Cu Pillar
 Bump Size φ20μm●
Bump Height (Cu15μm + SnAg8μm)
Bump Pitch ① 40μm ②300μm
Number of Bump ①1200 bumps ② 714 bumps
Number of Chip 312 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY


WALTS-TEG CC80MarkIV-0101JY  >> CONCEPT NEW!!

TEG_CC80TSV
Specification CC80MarkIV-0101JY
Wafer Size 8inch
Wafer Thickness 725±25μm
 Chip Chip A Chip B
Chip Size 6.0 mm × 10.0 mm 4.0 mm × 10.0 mm
 Pad Pitch
① 40μm[10Row]×50μm[192Row] (Peripheral)
② 80μm staggered[3Row] (Center core)
③ 150μm Min. Lattice
Function Daisy Chain
Electrode Cu Pillar
Bump Size φ25μm●
Number of Bump/Pad ①1920bumps/1920pads
② 687 bumps/ 687 pads
③1743bumps/1743pads
①1920bumps/1920pads
② 531 bumps/ 531 pads
③ 978 bumps/ 978 pads
Number of Chip Chip A:228chips/wafer  Chip B:228chips/wafer
Evaluation KIT WALTS-TEG IP80MarkIV-0101JY (Sillicon Interposer)


WALTS-TEG IP80MarkIV-0101JY  >> CONCEPT NEW!!

TEG_CC80TSV
Specification IP80MarkIV-0101JY
Wafer Size 8inch
Wafer Thickness 725±25μm
Chip Size 15.0 mm × 15.0 mm
 Pad Pitch
① 40μm[10Row]×50μm[192Row]×2 (Peripheral)
② 80μm staggered[3Row] (Center core)
③ 150μm Min. Lattice
④ 300μm (Staggered)
Function Daisy Chain
Electrode Electroless Ni/Au plating
Bump Size ①27μm● ②27μm● ③27μm● ④141μm■
Number of Bump/Pad ①3840bumps/3840pads
②1172bumps/1172pads
③2721bumps/2721pads
④328bumps/328pads
Number of Chip 97 chips/wafer
Evaluation KIT ---


WALTS-TEG FC150LC-0101JY

TEG_FC150LCJY_Si
Specification FC150LC-0101JY
Wafer Size φ 12 inch
Wafer Thickness 775±25μm
Chip Size 25.0mm■
Pad Pitch 150 μm (Area)
Function Daisy Chian
Bump Size φ75µm●
Bump Height Cu pillar (Cu30µm+SnAg15µm)
Number of Pad 25921 pads/chip (161×161)
Number of Chip 89 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT FC150LC-0302JY


WALTS-TEG FC150JY【Si-Type】

TEG_FC150JY_Si
Specification Type-A Type-B
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 150 μm (Area) 150 μm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ85µm● φ75µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 3721 pads/chip (61×61) 3721 pads/chip (61×61)
Number of Chip 208 chips/wafer 208 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0103JY 2×2
WALTS-KIT FC150-0104JY 2×2
WALTS-KIT FC150R-0102JY 2×2


WALTS-TEG FC150JY【Glass-Type】

TEG_FC150JY_Glass
Specification Type-A Type-B
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 700±70μm 700±70μm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 150 μm (Area) 150 μm (Area)
Function
Bump Size φ85µm● φ75µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 3721 pads/chip (61×61) 3721 pads/chip (61×61)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option) 208 chips/wafer 208 chips/wafer
Evaluation KIT WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0103JY 2×2
WALTS-KIT FC150-0104JY 2×2
WALTS-KIT FC150R-0102JY 2×2


WALTS-TEG FC150SCJY

TEG_FC150SCJY
Specification Type-A Type-B
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 5.02mm■ 5.02mm■
Pad Pitch 150 μm (Area) 150 μm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ85µm● φ75µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 784 pads/chip (28×28) 784 pads/chip (28×28)
Number of Chip 832 chips/wafer 832 chips/wafer
Polyimide (Option)
Evaluation KIT ---


WALTS-TEG FC200JY【Si-Type】

TEG_FC200JY_Si
Specification Type-A Type-B
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 200μm (Area) 200μm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ100µm● φ90µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 2116 pads/chip (46×46) 2116 pads/chip (46×46)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY 2×2
WALTS-KIT FC200-0102JY 2×2


WALTS-TEG FC200JY【Glass-Type】

TEG_FC200JY_Glass
Specification Type-A Type-B
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 700±70μm 700±70μm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 200μm (Area) 200μm (Area)
Function
Bump Size φ100µm● φ90µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 2116 pads/chip (46×46) 2116 pads/chip (46×46)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option)  ○
Evaluation KIT WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY 2×2
WALTS-KIT FC200-0102JY 2×2


WALTS-TEG FC200SCJY

TEG_FC200SCJY
Specification Type-A Type-B
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 725±25μm 725±25μm
Chip Size 5.02mm■ 5.02mm■
Pad Pitch 200μm (Area) 200μm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ100µm● φ90µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30μm+SnAg15μm)
Number of Pad 484 pads/chip (22×22) 484 pads/chip (22×22)
Number of Chip 832 chips/wafer 832 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT FC200SC-0202JY 2×3
WALTS-KIT FC200SC-0202JY 3×3


WALTS-TEG FC500G-0101JY【Glass-Type】

TEG_FC500G
Specification WALTS-TEG FC500G-0101JY【Glass Type】
Wafer Size φ 8 inch
Wafer Thickness 700±70μm
Chip Size 10.1mm■
Pad Pitch 500 μm
Function
Bump Size φ100µm●
Bump Height (Cu30μm+SnAg15μm)
Number of Pad 40 pads/chip
Number of Chip 240 chips/wafer
Evaluation KIT ---


WALTS-TEG FBW200-0001JY

WALTS-TEG FBW150-0001JY

WALTS-TEG FBW130-0001JY

WALTS-TEG FBW100-0001JY

WALTS-TEG FBW80-0001JY NEW!!

TEG_FBW200
Specification FBW200 FBW150 FBW130 FBW100 FBW80
Wafer Size φ 8 inch φ 8 inch φ 8 inch φ 8 inch φ 8 inch
Wafer Thickness 725±25μm 725±25μm 725±25μm 725±25μm 725±25μm
Bump Pitch 200μm 150μm 130μm 100μm 80μm
Electrode Cu Pillar Cu Pillar Cu Pillar Cu Pillar Cu Pillar
Bump Size φ90μm φ75μm φ65μm φ50μm φ40μm
 Bump Height (Max.60μm) (Max.60μm) (Max.60μm) (Max.60μm) (Max.50μm)


WLP TEG (0.4mm pitch & 0.3mm pitch)

WLP_0.3mm
Specification 0.4mm pitch BGA 0.3mm pitch BGA
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 400±20μm 400±20μm
Chip Size 6.0mm■ 6.0mm■
BGA Pitch 400μm 300μm
Function Daisy Chain Daisy Chain
Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump
Pad Size (φ227µm●) (φ177µm●)
Number of Pad 144 pins/chip 264 pins/chip
Number of Chip 712 chips/wafer 712 chips/wafer


WLP TEG (Free Size Cut TEG: TEG0306,TEG0408,TEG0510)

WLP_TEG0306
Specification TEG0306 TEG0408 TEG0510
Wafer Size φ 8 inch φ 8 inch φ 8 inch
Wafer Thickness 400μm 400μm 400μm
Cut Size (Min.) 600μm■ 800μm■ 1000μm■
Pad Pitch 300μm 400μm 500μm
Function Daisy Chain Daisy Chain Daisy Chain
Electrode  Ball Mounted Solder Bump  Ball Mounted Solder Bump Ball Mounted Solder Bump 
Post Size 175μm 200μm 250μm
Number of Chip 79257 chips/wafer 44161 chips/wafer 28212 chips/wafer


WALTS-TEG MC03-0101JY

TEG_MC03_3chipMix
Specification WALTS-TEG MC03-0101JY
Wafer Size φ 8 inch
Wafer Thickness 725μm±25μm
Chip Size 0.3mm■ 0.4mm■ 0.5mm■
Pad Pitch 120μm 220μm 320μm
 Function Daisy Chain  Daisy Chain  Daisy Chain
Pad Metal Size X: 65μm
Y: 170μm
X: 65μm
Y: 270μm
X: 65μm
Y: 370μm
Bump Size 40μm
Bump Height Au(10μm)
Number of Chip 149,216
chips/wafer
80,816
chips/wafer
26,604
chips/wafer
 Evaluation KIT ---


WALTS-TEG ME0102JY

 [for Migration Test]

TEG_ME0102
Specification WALTS-TEG ME0102JY
Wafer Size φ 12 inch
Chip Size 20mm×25mm
Chip Name Chip_10_15 Chip_20_25 Chip_30_35
Metal Height 5.5μm
Facing Legth 3mm
Line/Space 15μm/10μm 15μm/15μm 15μm/20μm 15μm/25μm 15μm/30μm 15μm/35μm
Pitch 25μm 30μm 35μm 40μm 45μm 50μm
Number of Chip 34 chips/wafer 40 chips/wafer 34 chips/wafer


WALTS-TEG STAC-0101JY 

 [for Stress & Thermal Resistance Analysis]

TEG_STAC-0101JY
Specification STAC-0101JY
Wafer Size φ 6 inch(Orientation Flat)
Wafer Thickness 550±25μm
Chip Size 3.0mm■
Pad Pitch 300μm
Function Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad 32 pads/chip
Number of Chip 1596 chips/wafer
Polyimide (Option)
<Option> Back Side Metallization
Evaluation KIT WALTS-KIT STAC-0201JY


WALTS-TEG STACTEG-150FA-0101JY NEW!!

WALTS-TEG STACTEG-300FA-0101JY NEW!!

TEG_FC200SCJY
Specification STACTEG-150FA
STACTEG-300FA
Base Wafer:WALTS-TEG STAC-0101JY 
Wafer Size φ 6 inch (Orientation Flat) φ 6 inch (Orientation Flat)
Wafer Thickness 550±25μm 550±25μm
Chip Size 3.0mm■ 3.0mm■
Pad Pitch 150μm 300μm
Function Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Bump Size φ110µm● φ110µm●
Bump Height (Ni5μm+SnAg75µm) (Cu50μm+SnAg10μm)
Number of Pad 32 pads/chip 32 pads/chip
Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps
Number of Chip 1596 chips/wafer 1596 chips/wafer
Polyimide (Option)
<Option> Back Side Metallization Back Side Metallization
Evaluation KIT WALTS-KIT STAC-0201JY


WALTS-TEG HPW-0101JY

 [for Thermal Resistance Analysis at High Power]

TEG_HPW-0101JY
Specification HPW-0101JY
Wafer Size φ 8 inch(Notch)
Wafer Thickness 725±25μm
Chip Size 3.0mm■
Pad Pitch 300μm
Function Thermal Analysis by Diode
Heat Generarion by Resistance
Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad 32 pads/chip
Number of Chip 2964 chips/wafer
Polyimide (Option)
 <Maximum Output> Max. 14.5W/Chip
<Option> Back Side Metallization


WALTS-TEG HPWTEG-150FA-0101JY NEW!!

WALTS-TEG HPWTEG-300FA-0101JY NEW!!

TEG_FC200SCJY
Specification HPWTEG-150FA
HPWTEG-300FA
Base Wafer:WALTS-TEG HPW-0101JY 
Wafer Size φ 8 inch(Notch) φ 8 inch(Notch)
Wafer Thickness 725±25μm 725±25μm
Chip Size 3.0mm■ 3.0mm■
Pad Pitch 150μm 300μm
Function Thermal Analysis by Diode
Heat Generarion by Resistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Bump Size φ110µm● φ110µm●
Bump Height (Ni5μm+SnAg75µm) (Cu50μm+SnAg10μm)
Number of Pad 32 pads/chip 32 pads/chip
Number of Bump 32 bumps + 253 Dummy bumps
32 bumps + 64 Dummy bumps
Number of Chip 2964 chips/wafer 2964 chips/wafer
<Option> Back Side Metallization Back Side Metallization
Evaluation KIT ---


WALTS-TEG HPW TSV-0101JY NEW!!

TEG_CC80TSV
Specification HPW TSV-0101JY
Base Wafer:WALTS-TEG HPW-0101JY(SiN) 
Wafer Size φ 8 inch(Notch)
Wafer Thickness 100μm
Chip Size 3.0mm■
Top
Side
Electrode Cu Pillar
Bump Pitch 300μm
Bump Size φ100μm●
Bump Height (Cu50μm+SnAg10μm)
Number of Bump 32 bumps + 64 Dummy bumps
TSV Via Size φ90μm●
Bottom
Side 
Electrode Electroless Ni/Au Plating
Bump Pitch 300μm
Bump Size φ100μm●
Bump Height (8μm)
Number of Bump 32 bumps
Number of Chip 2964 chips/wafer
Evaluation KIT ---


WALTS-TEG Thermal Chip

TEG_Thermal_A
Specification Type-A Type-B Type-C
Wafer Size φ 5 inch φ 5 inch φ 5 inch
Wafer Thickness 625μm 625μm 625μm
Chip Size 3.2mm■ 1.6mm■ 0.8mm■
Pad Pitch any any any
Function Fever resistance Fever resistance Fever resistance
Bump Size
Bump Height
Number of Pad 20 pads/chip 12 pads/chip 8 pads/chip
Number of Chip 655 chips/wafer 974 chips/wafer 1272 chips/wafer
Polyimide (Option)
 Evaluation KIT ---


WALTS-TEG LKWB120 (Low-k TEG)

TEG_LKWB120
Specification LKWB120
Wafer Size φ 12 inch
Wafer Thickness 775±25μm
Chip Size 10.0 mm■
Pad Pitch 120 μm Staggered
Function Daisy Chian,Comb tooth Capacitor,Serpentine Resistor,Interlayer Capacitor,Via Chain
Bump Size
Bump Height
Number of Pad 616 pads/chip
Number of Chip 636 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT LKWB120


WALTS-TEG LCD30-0101JY

TEG_LCD30-0101JY
Specification LCD30-0101JY
Wafer Size φ 6 inch
Wafer Thickness 550±25μm
Chip Size 15.1 mm × 1.6 mm
Pad Pitch 30μm
Function Daisy Chian
Bump Size 20µm×100µm
Bump Height any
Number of Pad 726 pads/chip
Number of Chip 530 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT LCD30_ITO
WALTS-KIT COF30


WALTS-TEG PWB0101JY

TEG_PWB-0101JY
Specification PWB0101JY
Wafer Size φ 6 inch
Wafer Thickness 625±25μm
Chip Size 6.0mm■
Pad Pitch
Function Bondability Check
Bump Size
Bump Height
Number of Pad
Number of Chip
Polyimide (Option) ---
Evaluation KIT ---